Embodiments of the present application provide a semiconductor structure and a fabrication method thereof. The semiconductor structure includes a substrate; a first mask layer positioned on the substrate, wherein the first mask layer has a plurality of discrete first mask patterns; and a second mask layer positioned on the first mask layer, wherein the second mask layer has a second mask pattern, and at least a part of sidewalls of the second mask pattern is positioned on tops of the first mask patterns.

A method for forming nanoparticles includes forming a stack of alternating layers including a first material disposed between a second material. The stack of alternating layers is patterned to form pillars. A dielectric layer is conformally deposited over the pillars. The pillars are annealed in an oxygen environment to modify a shape of the first material of the alternating layers. The dielectric layer and the second material are etched selectively to the first material to form nanoparticles from the first material.

A method for forming nanoparticles includes forming a stack of alternating layers including a first material disposed between a second material. The stack of alternating layers is patterned to form pillars. A dielectric layer is conformally deposited over the pillars. The pillars are annealed in an oxygen environment to modify a shape of the first material of the alternating layers. The dielectric layer and the second material are etched selectively to the first material to form nanoparticles from the first material.

Method of making a quantum device with a quantum island structure, comprising the formation of a stack comprising a first semiconducting layer based on an undoped semiconducting material on which at least one second doped semiconducting layer is grown by epitaxy, the doping being made during epitaxial growth, a first region (212a) belonging to the first semiconducting layer and a second region (214a) belonging to the second semiconducting layer being suitable for forming a quantum island.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.