Patent classifications
H01L31/0684
BIFACIAL PHOTOVOLTAIC MODULE
A bifacial photovoltaic module has components that are arranged to maximize the efficiency of a module for both front and back surfaces. An opaque portion is disposed on back surfaces of modules and aligned with horizontal support bars of a multiple-module system. Junction boxes are arranged at opposing ends of the opaque portion and couple adjacent modules in the system.
Solar cell
A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.
SOLAR ARRAY DEVICES WITH STRUCTURAL ELECTRICAL CONNECTIONS
A solar cell array assembly that includes a first solar cell having a first side and a second side; a second solar cell in a stacked below the first cell, the second cell having a first side and a second side; and a structural conductor disposed between the first cell and second cell; wherein the structural conductor being selected to support a weight of, at least, the first cell to maintain a selected distance between the first cell and the second cell; and wherein the structural conductor being electrically coupled to the second side of the first cell and the first side of the second cell.
TUNNEL OXIDE LAYER, N-TYPE BIFACIAL CRYSTALLINE SILICON SOLAR CELL AND METHOD FOR MANUFACTURING SAME
A tunnel oxide layer, an N-type bifacial crystalline silicon solar cell and a method for manufacturing the same are provided. The method for manufacturing the tunnel oxide layer includes forming excess -OH on a back side of a silicon wafer, and depositing the tunnel oxide layer on the back side of the silicon wafer by a Plasma Enhanced Atomic Layer Deposition method. The method for manufacturing the N-type bifacial crystalline silicon solar cell can include following steps: performing cleaning, texturing, boron diffusing, and alkaline polishing on an N-type silicon wafer, sequentially forming a P-type doped layer, a passivation layer, and an anti-reflection layer on a front side of the alkaline-polished N-type silicon wafer, and forming a tunnel oxide layer on a back side of the alkaline-polished N-type silicon wafer, followed by forming an N-type doped polysilicon layer, and after annealing, forming an anti-reflection layer.
IMPROVED CONTACTS FOR A PHOTOVOLTAIC CELL WITH TWO ACTIVE SURFACES
Fabrication of a double-sided photovoltaic cell, with two opposite active surfaces, comprising a step of depositing, on each active surface, at least one electric contact. The deposition step comprises in particular a shared operation of depositing on each of the active surfaces, implemented by electrolysis in a shared electrolysis tank comprising: a first compartment for depositing a metal layer on a first active surface of the cell, for fabrication of a contact comprising said metal layer on the first active surface; and a second compartment for depositing, by oxidation, a metal oxide conductor layer on the second active surface of the cell, for the fabrication of a contact comprising said metal oxide layer on the second active surface.
SOLAR CELL, SOLAR CELL MODULE AND METHOD OF MANUFACTURING THEREFOR
A solar cell module can include an octagonal-shaped semiconductor substrate having a chamfer formed at each edge among at least two opposite edges of the octagonal-shaped semiconductor; and a first electrode unit formed on one surface of the octagonal-shaped semiconductor substrate, the first electrode unit including: a plurality of first sub-electrodes including first finger electrodes and a first bus bar electrode connected to ends of the first finger electrodes, and a plurality of second sub-electrodes including second finger electrodes and a second bus bar electrode connected to ends of the second finger electrodes, in which the plurality of first sub-electrodes are spaced apart from the plurality of second sub-electrodes in a first direction, and a first sub-electrode disposed adjacent to a chamfer at a first edge among the at least two opposite edges in the first direction among the plurality of first sub-electrodes, and a second sub-electrode disposed adjacent to another chamfer at a second edge among the at least two opposite edges are symmetrical in a longitudinal direction of the first and second bus bar electrodes.
Method for manufacturing solar cell having electrodes including metal seed layer and conductive layer
A method for manufacturing a solar cell includes forming an emitter layer on a first surface of a substrate, forming a back surface field layer on a second surface opposite the first surface of the substrate, forming a first anti-reflection layer on the emitter layer, forming a second anti-reflection layer on the back surface field layer, and forming a plurality of first electrodes each including a first metal seed layer and a first conductive layer on a plurality of first contact regions of the first anti-reflection film and a plurality of second electrodes each including a second metal seed layer and a second conductive layer on a plurality of second contact regions of the second anti-reflection film, the plurality of first contact regions being partially formed at the first anti-reflection layer and each having a first width.
Methods of producing uniform intrinsic layer
A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.
BIFACIAL P-TYPE PERC SOLAR CELL AND MODULE, SYSTEM, AND PREPARATION METHOD THEREOF
The present invention discloses a bifacial P-type PERC solar cell, which consecutively comprises a rear silver electrode, rear aluminum grid lines, a rear surface passivation layer, a P-type silicon, an N-type emitter, a front surface silicon nitride film, and a front silver electrode; a laser grooving region is formed at the rear surface passivation layer by laser grooving; the rear aluminum grid lines are connected to the P-type silicon via the laser grooving region; the laser grooving region includes a plurality of sets of laser grooving units arranged horizontally; each of the sets of laser grooving units includes one or more laser grooving bodies arranged horizontally; the rear aluminum grid lines are perpendicular to the laser grooving bodies. The present invention is simple in structure, low in cost, widely applicable, and has a high photoelectric conversion efficiency.
SOLAR CELL
A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and directly positioned on the plurality of back surface field regions through the back aluminum oxide layer and the back silicon nitride layer; and a plurality of second back electrodes extending in the second direction and electrically and physically connected to the plurality of first back electrodes, wherein the front negative fixed charge layer and the back aluminum oxide layer have the same thickness.