Patent classifications
H01L31/0693
Metamorphic layers in multijunction solar cells
A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
Metamorphic layers in multijunction solar cells
A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
OPTICALLY-TRANSPARENT SEMICONDUCTOR BUFFER LAYERS AND STRUCTURES EMPLOYING THE SAME
Semiconductor structures including optically-transparent metamorphic buffer regions, devices employing such structures, and methods of fabrication. The optically-transparent metamorphic buffer is grown to provide a lattice constant transition between a smaller lattice constant and a larger lattice constant (or vice-versa), allowing materials with two different lattice constants to be monolithically integrated. Such buffer layer may include at least two elements from group V of the periodic table. The optically-transparent metamorphic buffer region may include digital-alloy superlattice structure (s) to confine material defects to the metamorphic buffer layer, and improve electrical properties of the metamorphic buffer layer, thereby improving the electronic properties of electronic devices such as optoelectronic devices and photovoltaic cells. Photonic devices such as solar cells and optical detectors containing such semiconductor structures.
OPTICALLY-TRANSPARENT SEMICONDUCTOR BUFFER LAYERS AND STRUCTURES EMPLOYING THE SAME
Semiconductor structures including optically-transparent metamorphic buffer regions, devices employing such structures, and methods of fabrication. The optically-transparent metamorphic buffer is grown to provide a lattice constant transition between a smaller lattice constant and a larger lattice constant (or vice-versa), allowing materials with two different lattice constants to be monolithically integrated. Such buffer layer may include at least two elements from group V of the periodic table. The optically-transparent metamorphic buffer region may include digital-alloy superlattice structure (s) to confine material defects to the metamorphic buffer layer, and improve electrical properties of the metamorphic buffer layer, thereby improving the electronic properties of electronic devices such as optoelectronic devices and photovoltaic cells. Photonic devices such as solar cells and optical detectors containing such semiconductor structures.
SPUTTERED THEN EVAPORATED BACK METAL PROCESS FOR INCREASED THROUGHPUT
A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.
LASER-TEXTURED THIN-FILM SEMICONDUCTORS BY MELTING AND ABLATION
A photovoltaic device and a method of making the photovoltaic device are disclosed. The photovoltaic device may include a semiconductor layer epitaxially grown using a compound semiconductor material, such as a group III-V semiconductor material, wherein a surface of the semiconductor layer is textured via one or more laser pulses of a laser. The photovoltaic device may also include a dielectric layer deposited over the textured surface of the semiconductor layer, and a back metal reflector provided on the dielectric layer. The textured surface extends a path of light traveling through the photovoltaic device to increase absorption of the light within the photovoltaic device.
Large-scale space-based solar power station: efficient power generation tiles
A space-based solar power station, a power generating satellite module and/or a method for collecting solar radiation and transmitting power generated using electrical current produced therefrom is provided. Each solar power station includes a plurality of satellite modules. The plurality of satellite modules each include a plurality of modular power generation tiles including a photovoltaic solar radiation collector, a power transmitter and associated control electronics. Numerous embodiments relate to efficient power generation tiles. In one embodiment, an efficient power generation tile includes: at least one photovoltaic material; and at least one concentrator that redirects incident solar radiation towards a photovoltaic material such that the photovoltaic material experiences a greater solar flux relative to the case where the photovoltaic material experiences unaltered solar radiation.
Large-scale space-based solar power station: efficient power generation tiles
A space-based solar power station, a power generating satellite module and/or a method for collecting solar radiation and transmitting power generated using electrical current produced therefrom is provided. Each solar power station includes a plurality of satellite modules. The plurality of satellite modules each include a plurality of modular power generation tiles including a photovoltaic solar radiation collector, a power transmitter and associated control electronics. Numerous embodiments relate to efficient power generation tiles. In one embodiment, an efficient power generation tile includes: at least one photovoltaic material; and at least one concentrator that redirects incident solar radiation towards a photovoltaic material such that the photovoltaic material experiences a greater solar flux relative to the case where the photovoltaic material experiences unaltered solar radiation.
FORMING FRONT METAL CONTACT ON SOLAR CELL WITH ENHANCED RESISTANCE TO STRESS
System and method of providing a photovoltaic (PV) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film PV layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (PV) surface. The cushion layer is made of a nonconductive material and has a plurality of vias filled with a conductive material to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.
FORMING FRONT METAL CONTACT ON SOLAR CELL WITH ENHANCED RESISTANCE TO STRESS
System and method of providing a photovoltaic (PV) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film PV layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (PV) surface. The cushion layer is made of a nonconductive material and has a plurality of vias filled with a conductive material to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.