A thin-film solar cell contains: a lens material layer, a conductive contact layer, a first n-p semiconductor layer, a second n-p semiconductor layer, an insulation layer, a transparent conducting layer, a substrate, multiple first vias, multiple insulators, and multiple electrical conductors. A respective first via passes through the lens material layer, the conductive contact layer, and the first n-p semiconductor layer. The multiple insulators are accommodated in the respective first via, a top of a respective insulator is connected with the second n-p semiconductor layer, and a bottom of the respective insulator is connected with the insulation layer. The respective insulator includes a respective second via. A respective electrical conductor is formed in the respective second via, a top of the respective electrical conductor is connected with a respective transparent conducting layer, and a bottom of the respective electrical conductor is connected with the substrate.

According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

An optoelectronic device comprising two photovoltaic absorber materials of CdSeTe and perovskite and their functional component layers that are monolithically integrated into a bifacial tandem solar cell structure.

An optoelectronic device comprising two photovoltaic absorber materials of CdSeTe and perovskite and their functional component layers that are monolithically integrated into a bifacial tandem solar cell structure.

Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.

Disclosed herein are CdSeTe photovoltaic devices having interdigitated back contact architecture for use in polycrystalline thin films in photovoltaic devices.

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.