Patent classifications
H01L31/076
TANDEM SOLAR CELL, TANDEM SOLAR CELL MODULE COMPRISING THE SAME, AND METHOD FOR MANUFACTURING THEREOF
The present disclosure relates to a tandem solar cell, a tandem solar cell module comprising the tandem solar cell, and a method for manufacturing the same. More specifically, the present disclosure relates to a monolithic tandem solar cell comprising a perovskite solar cell laminated on a front surface of a crystalline silicon solar cell, and a method for manufacturing the same.
According to the present disclosure, a Nano-electrode structure can be patterned on a front surface of a front transparent electrode of a solar cell in which a crystalline silicon solar cell and a perovskite solar cell are bonded via a junction layer, such that the optical path of the sunlight incident on the solar cell through the Nano-electrode structure can be increased to improve the utilization rate of the light.
TANDEM SOLAR CELL, TANDEM SOLAR CELL MODULE COMPRISING THE SAME, AND METHOD FOR MANUFACTURING THEREOF
The present disclosure relates to a tandem solar cell, a tandem solar cell module comprising the tandem solar cell, and a method for manufacturing the same. More specifically, the present disclosure relates to a monolithic tandem solar cell comprising a perovskite solar cell laminated on a front surface of a crystalline silicon solar cell, and a method for manufacturing the same.
According to the present disclosure, a Nano-electrode structure can be patterned on a front surface of a front transparent electrode of a solar cell in which a crystalline silicon solar cell and a perovskite solar cell are bonded via a junction layer, such that the optical path of the sunlight incident on the solar cell through the Nano-electrode structure can be increased to improve the utilization rate of the light.
Thin-film photoelectric conversion device and method for manufacturing same
The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.
Thin-film photoelectric conversion device and method for manufacturing same
The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.
PHOTOCHEMICAL REACTION SYSTEM
According to one embodiment, a photochemical reaction system comprises a CO.sub.2 production unit, a CO.sub.2 absorption unit, and a CO.sub.2 reduction unit. The CO.sub.2 reduction unit comprises a laminated body and an ion transfer pathway. The laminated body comprises an oxidation catalyst layer producing O.sub.2 and H.sup.+ by oxidizing H.sub.2O, a reduction catalyst layer producing carbon compounds by reducing CO.sub.2 absorbed by the CO.sub.2 absorption unit, and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and develops charge separation with light energy. The ion transfer pathways make ions move between the oxidation catalyst layer side and the reduction catalyst layer side.
PHOTOCHEMICAL REACTION DEVICE
According to one embodiment, a photochemical reaction device comprises a laminated body and an ion transfer pathway. A laminated body comprises an oxidation catalyst layer for producing oxygen and protons by oxidizing water a reduction catalyst layer for producing carbon compounds by reducing carbon dioxide and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and developing charge separation with light energy. An ion transfer pathway moves ions between the oxidation catalyst layer side and the reduction catalyst layer side.
Gas distribution blocker apparatus
Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
Hydrogen production device and method for producing hydrogen
There is provided a hydrogen production device which is high in the light use efficiency and can produce hydrogen with high efficiency without decreasing the hydrogen generation rate. The hydrogen production device according to the present invention comprises: a photoelectric conversion part having a light acceptance surface and a back surface; a first gas generation part and a second gas generation part provided on the back surface, wherein one of the first gas generation part and the second gas generation part is a hydrogen generation part to generate H.sub.2 from an electrolytic solution, and the other thereof is an oxygen generation part to generate O.sub.2 from the electrolytic solution, and at least one of the first gas generation part and the second gas generation part is plural, and the photoelectric conversion part is electrically connected to the first gas generation part and the second gas generation part so that an electromotive force generated by a light acceptance of the photoelectric conversion part is supplied to the first gas generation part and the second gas generation part.
Photochemical reaction device
According to one embodiment, a photochemical reaction device comprises a laminated body and an ion transfer pathway. A laminated body comprises an oxidation catalyst layer for producing oxygen and protons by oxidizing water a reduction catalyst layer for producing carbon compounds by reducing carbon dioxide and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and developing charge separation with light energy. An ion transfer pathway moves ions between the oxidation catalyst layer side and the reduction catalyst layer side.
Energy harvesting devices and method of fabrication thereof
An apparatus and method pertaining to a perpetual energy harvester. The harvester absorbs ambient infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester.