A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

A method of forming a plurality of monolithic light emitting diode (LED) pixels (1) for a LED display is provided. The method comprises forming a common (102) semiconducting layer comprising a Group III-nitride on a sacrificial substrate and forming n array of light emitting diode (LED) subpixels on a surface of the common semiconducting layer. The method further includes forming a planarising dielectric layer on the array of LED subpixels. The array of the LED subpixels is divided into a plurality of monolithic LED pixels by etching a grid of pixel defining trenches to the sacrificial substrate, wherein each monolithic LED pixel comprises at least two LED subpixels. A sacrificial dielectric layer is formed on the pixel trenches to form a bonding surface. A handling substrate is bonded to the bonding surface, wherein first portions of the sacrificial substrate are selectively removed for separating each of the monolithic LED pixels. Light extraction features are formed for each of the monolithic LED pixels comprising: selectively removing second portions of the sacrificial substrate aligned with each of the LED subpixels and the sacrificial dielectric layer is removed to separate each monolithic LED pixel from the handling substrate.

There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.

A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×10.sup.8 cm.sup.−2.

A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×10.sup.17 cm.sup.−3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×10.sup.14 cm.sup.−3 and 1×10.sup.17 cm.sup.−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

An LED display apparatus with a simplified manufacturing process is provided. The LED display apparatus includes a common electrode layer on a first substrate, a second substrate including a first pixel driving device and a second pixel driving device, and a first light emitting device and a second light emitting device on the common electrode layer. The first light emitting device includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second light emitting device includes a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer. As such, it is possible to provide an LED display apparatus with improved manufacturing reliability having at least one unit pixel composed of pixels by using at least one light emitting device integrated with the common electrode layer and at least two individual light emitting devices.

A device includes a substrate, and a plurality of structures supported by the substrate, each structure of the plurality of structures including a Group III-nitride base, first and second Group III-nitride charge carrier injection layers supported by the Group III-nitride base, and a quantum heterostmcture disposed between the first and second charge carrier injection layers. The quantum hetero structure includes a pair of Group III-nitride barrier layers, and a Group III-nitride active layer disposed between the pair of Group III-nitride barrier layers. The Group III-nitride active layer has a thickness for quantum confinement of charge carriers. At least one of the pair of Group III-nitride barrier layers has a nitride surface adjacent to the Group III-nitride active layer.

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.