The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

A semiconductor structure having a multiple-porous graphene layer includes a sapphire substrate, a single or multiple layer porous graphene film, and a gallium nitride layer. A fabrication method for forming the semiconductor structure having a single or multiple layer porous graphene film, includes: firstly, growing up the graphene on the copper foil; then, using the acetone and isopropyl alcohol to wash the sapphire substrate, and then using the nitrogen flow to dry up; transferring the graphene onto the semiconductor substrate, using the Poly(methyl methacrylate) to fix the single or multiple layer porous graphene film, and using the acetone to wash up; using the photolithography process to etch the whole surface of the multiple-porous graphene layer; and, using the metalorganic chemical vapor deposition to deposit gallium nitride on the single or multiple layer porous graphene film and the sapphire substrate.

A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.

The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs for light emitting diode displays and methods of manufacture. The method includes: forming replacement fin structures with a doped core region, on doped substrate material; forming quantum wells over the replacement fin structures; forming a first color emitting region by doping at least one of the quantum wells over at least a first replacement fin structure of the replacement fin structures, while protecting at least a second replacement fin structure of the replacement fin structures; and forming a second color emitting region by doping another one of the quantum wells over the at least second replacement fin structure of the replacement fin structures, while protecting the first replacement fin structure and other replacement fin structures which are not to be doped.

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an epitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

A micro-LED transfer method, manufacturing method and display device are disclosed. The method comprises: coating conductive photoresist on a receiving substrate, wherein the conductive photoresist is positive-tone photoresist; bonding a carrier substrate with the receiving substrate via the conductive photoresist, wherein metal electrodes of micro-LEDs on the carrier substrate are aligned with electrodes on the receiving substrate and are bonded with the electrodes on the receiving substrate via the conductive photoresist, and the carrier substrate is a transparent substrate; selectively lifting-off micro-LEDs from the carrier substrate through laser lifting-off using a first laser; and separating the carrier substrate from the receiving substrate.

An n-side flattening electrode and a p-side flattening electrode are formed apart from each other on a predetermined region on an insulating film. Recesses are formed according to the level difference due to holes on the surfaces of the n-side flattening electrode and the p-side flattening electrode. Subsequently, the surfaces of the n-side flattening electrode and the p-side flattening electrode are ground until the surfaces become flat. After removal of oxide film, an n-side junction electrode and a p-side junction electrode are formed on the n-side flattening electrode and the p-side flattening electrode, respectively. Since the surfaces of the n-side flattening electrode and the p-side flattening electrode are flattened, the surfaces of the n-side junction electrode and the p-side junction electrode become flat so that the thickness is uniform.