A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

Method for producing a photoemitting or photoreceiving diode, including: producing, on a first substrate, first and second semiconductor layers with opposite dopings, and a third intrinsic semiconductor layer; etching trenches surrounding remaining portions of the second and third layers and of a first part of the first layer; producing, in the trenches, a dielectric spacer covering side walls of said remaining portions; etching extending the trenches as far as the first substrate; laterally etching a part of the dielectric spacer, exposing contact surfaces of the second part of the first layer; producing, in the trenches, a first electrode in contact with the contact surfaces of the second part of the first layer and with lateral flanks of the second part of the first layer.

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

A template substrate including: a first layer that includes Al.sub.x2In.sub.x1Ga.sub.(1-x1-x2)N (0<x1<1, 0≤x2<1) and has a lattice constant a1 in an in-plane direction greater than a lattice constant of GaN in the in-plane direction, the first layer being lattice-relaxed; a second layer that is stacked on the first layer to be lattice-matched to the first layer and includes Al.sub.yGa.sub.(1-y)N (0≤y<1); and a third layer that is provided opposed to the first layer with the second layer being interposed therebetween, the third layer being lattice-matched to the second layer and including Al.sub.z2In.sub.z1Ga.sub.(0-z1-z2)N (0<z1<1, 0≤z2<1).

Provided is a micro light emitting diode (LED) structure including an n-type semiconductor substrate layer, a light emitting structure layer formed on the n-type semiconductor substrate layer, and a p-type semiconductor layer formed on the light emitting structure layer, wherein the light emitting structure layer includes an arrangement of light emitting structures in which active layers including In and Ga are formed on tops thereof, wherein the light emitting structure layer forms at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths, the distinctive regions are controllable to emit light individually, and the distinctive regions are different in at least one of sizes of base faces, heights, and center-to-center distances of the lighting emitting structures of the regions.

Particular embodiments described herein provide for an electronic device that can be configured to include a direct view light emitting diode (LED) display. The display can include a plurality of microLEDs and a backplane. Each microLED is comprised of a plurality of nano-pyramid LEDs and the backplane is coupled to each of the microLEDs and can drive each of the microLEDs Each of the plurality of microLEDs includes an array at least two nano-pyramid LEDs connected together. The display can include a plurality of blue microLEDs, a plurality of green microLEDs, and a plurality of red microLEDs

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

A nanowire system includes a substrate and at least one nanowire structure which extends out along an axis from a surface of the substrate. The nanowire structure comprises a light emitting diode and a device driver electrically coupled to control an operational state of the light emitting diode. The light emitting diode and the device driver are integrated to each share at least one doped region.

A method of manufacturing a nitride semiconductor light-emitting element includes growing an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. The step of growing the active layer includes growing a first barrier layer before growing a well layer. The step of growing the first barrier layer includes a first stage where a first nitride semiconductor layer containing In is grown with a first concentration of n-type impurity, a second stage where a second nitride semiconductor layer containing In is grown with a second concentration of n-type impurity higher than the first concentration, a third stage where a third nitride semiconductor layer containing In is grown with a third concentration of n-type impurity lower than the second concentration, and a fourth stage where a fourth nitride semiconductor layer is grown under a growth condition in which an amount of an impurity source gas is decreased or stopped.