A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

An epitaxial conversion element, a method for producing an epitaxial conversion element, a radiation emitting RGB unit and a method for producing a radiation emitting RGB unit are disclosed. In an embodiment an epitaxial conversion element includes a green converting epitaxial layer configured to convert electromagnetic radiation from a blue spectral range into electromagnetic radiation of a green spectral range and a red converting epitaxial layer configured to convert electromagnetic radiation from the blue spectral range into electromagnetic radiation of a red spectral range, wherein the green converting epitaxial layer and the red converting epitaxial layer are based on a phosphide compound semiconductor material, and wherein the green converting epitaxial layer and the red converting epitaxial layer are in different main extension planes which are parallel to each other.

A patterned epitaxial structure laser lift-off device, including a substrate, reshaping structures, a transmittance adjustment structure, a patterned epitaxial structure, gas transmission systems, an ultraviolet source, a lift-off chamber and a light entry window. The gas transmission systems are at two sides of the lift-off chamber; the light entry window is on the lift-off chamber; the ultraviolet source is above the outside of the light entry window; the patterned epitaxial structure is inside the lift-off chamber; the substrate is on the patterned epitaxial structure. The patterned epitaxial structure includes an epitaxial structure, a sapphire substrate, patterned structures, oblique interfaces and planar interfaces, several patterned structures being uniformly designed on the epitaxial structure, each of the patterned structures being a V-shaped groove structure formed by two oblique interfaces, two adjacent patterned structures being connected by means of a planar interface.

The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.

A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

A light-emitting diode, comprising a substrate that has a first surface and an opposing second surface. A reflection layer is disposed on the first surface of the substrate and a light-emitting diode structure is arranged on the second surface of the substrate. The light-emitting diode structure includes a first semiconducting layer, an active layer and a second semiconducting layer disposed consecutively on the second surface. A plurality of protruding asymmetric micro-structured elements define at least a part of the second surface of the substrate such that at least a portion of a surface of each micro-structured element is disposed at an obtuse angle to the first surface of the substrate when measured from within the respective micro-structured element. The first semiconducting layer and the second semiconducting layer respectively have a first electrode and a second electrode.

An LED package for connection to a heat sink, the LED package comprising an LED structure having a first surface for emitting light and an opposite second surface, the LED structure comprising a light producing layer and a reflective layer, wherein the reflective layer is provided between the light producing layer and the second surface, whereby light is reflected by the reflective layer to the first surface, the first surface further comprising first and second electrical contacts. A frame overlaps the periphery of the first surface of the LED structure and has an aperture for emitting light from the first surface, the frame comprising first and second vias for connection to an external electrical circuit, the first and second vias are soldered to the first and second electrical contacts of the LED structure respectively.

A light-emitting element includes: a first n-type nitride semiconductor layer; a first light-emitting layer located on the first n-type nitride semiconductor layer; a p-type GaN layer located on the first light-emitting layer; an n-type GaN layer located on the p-type GaN layer and doped with an n-type impurity at an impurity concentration higher than that of the first n-type nitride semiconductor layer; a non-doped GaN layer located between the p-type GaN layer and the n-type GaN layer, a thickness of the non-doped GaN layer being not more than a width of a depletion layer formed by the n-type and p-type GaN layers; a second n-type nitride semiconductor layer located on the n-type GaN layer and doped with an n-type impurity; a second light-emitting layer located on the second n-type nitride semiconductor layer; and a p-type nitride semiconductor layer located on the second light-emitting layer and doped with a p-type impurity.

An image display device includes a plurality of micro light-emission elements that constitute a pixel and that are provided on a driving circuit substrate. The micro light-emission element displays an image by emitting light to a side opposite to the driving circuit substrate. A light convergence portion that converges light is disposed in the pixel.