An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.

An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

The present disclosure relates to an adhesive transfer film for bonding a semiconductor chip and a spacer to a substrate and a method for manufacturing a power module substrate by using same, the adhesive transfer film being obtained by manufacturing an Ag sintering paste in the form of a film. The present disclosure can reduce the process time by minimizing a sintering process, and can reduce equipment investment cost.

The present disclosure relates to an adhesive transfer film for bonding a semiconductor chip and a spacer to a substrate and a method for manufacturing a power module substrate by using same, the adhesive transfer film being obtained by manufacturing an Ag sintering paste in the form of a film. The present disclosure can reduce the process time by minimizing a sintering process, and can reduce equipment investment cost.

An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): ##STR00001##
wherein R.sup.1 represents an electron-donating group.

An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): ##STR00001##
wherein R.sup.1 represents an electron-donating group.

A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.

A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.