A semiconductor device includes a semiconductor chip, a metal member, and a terminal. The semiconductor chip has an electrode. The metal member is electrically connected to the electrode. The terminal extends from the metal member to be connected to an external connection member. The terminal has a width-increased portion in a predetermined area beginning from a first end of the terminal that connects to the metal member.

A semiconductor device includes a first substrate structure having a first substrate, circuit elements disposed on the first substrate, and first bonding pads disposed on the circuit elements. A second substrate structure is connected to the first substrate structure. The second substrate structure includes a second substrate having first and second surfaces, first and second conductive layers spaced apart from each other, a pad insulating layer having an opening exposing a portion of the second conductive layer and gate electrodes stacked to be spaced apart from each other in a first direction and electrically connected to the circuit elements. First contact plugs extend on the second surface in the first direction and connect to the gate electrodes. A second contact plug extends on the second surface in the first direction and electrically connects to the second conductive layer. Second bonding pads electrically connect to the first and second contact plugs.

Implementations of semiconductor packages may include a first substrate coupled to a first die, a second substrate coupled to a second die, and a spacer included within a perimeter of the first substrate and within a perimeter of a second substrate, the spacer coupled between the first die and the second die, the spacer include a junction cooling pipe therethrough.

Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.

A semiconductor component includes: a semiconductor device; an insulating molded portion configured to encapsulate the semiconductor device; a terminal connected to the semiconductor device, the terminal being configured to project out from the insulating molded portion; and a cooler mounted with the insulating molded portion such that the semiconductor device is cooled; wherein a recessed portion is formed in a surface of the cooler on which the insulating molded portion is mounted so as to extend from a position facing the terminal to a position at inner side of an end portion of the insulating molded portion.

Implementations of semiconductor packages may include a first substrate coupled to a first die, a second substrate coupled to a second die, and a spacer included within a perimeter of the first substrate and within a perimeter of a second substrate, the spacer coupled between the first die and the second die, the spacer include a junction cooling pipe therethrough.

Various embodiments include a semiconductor component comprising: a first carrier part; a second carrier part arranged opposite the first carrier part; a semiconductor element arranged between the first carrier part and the second carrier part; a contact surface arranged on one of the parts; a contact sleeve arranged on one of the carrier parts opposite the contact surface; and a contact pin with, at one axial end, an end face providing an electrical contact connection of the contact surface and, in a region averted from said axial end, a connection region for the connection of the contact pin with the contact sleeve by means of press fitting. At least one of the first carrier part or the second carrier part comprises a printed conductor connected to the contact surface and/or to the contact sleeve.

The invention discloses a parallel electrode combination, which includes a first power module electrode and a second power module electrode, wherein a soldering portion of the first power module electrode and a soldering portion of the second power module electrode are respectively used to connect a copper layer of a power source inside a power module, and a connecting portion of the first power module electrode and a connecting portion of the second power module electrode are opposite in parallel. The invention further discloses a power module and a power module group using the parallel electrode combination. In the invention, the connecting portion of the first power module electrode and the connecting portion of the second power module electrode are opposite in parallel.

A semiconductor component includes: a semiconductor device; an insulating molded portion configured to encapsulate the semiconductor device; a terminal connected to the semiconductor device, the terminal being configured to project out from the insulating molded portion; and a cooler mounted with the insulating molded portion such that the semiconductor device is cooled; wherein a recessed portion is formed in a surface of the cooler on which the insulating molded portion is mounted so as to extend from a position facing the terminal to a position at inner side of an end portion of the insulating molded portion.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and flake-shaped micro copper particles having a maximum particle size of 1 μm to 20 μm, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 μm to 20 μm and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.