A bonding method of a first member and a second member includes: forming a first wire bonding bump (12) on a first electrode (14) arranged in the first member; forming a second wire bonding bump (22) on a second electrode 24 arranged in the second member; and flattening a tip section of the second wire bonding bump to form a bump flat surface (221). The tip section (120) of the first wire bonding bump and the bump flat surface (221) are pressure bonded to each other.

A fluxless bonding process is provided. An array of micro solder bumps of a first semiconductor structure is aligned to an array of bonding pads of a second semiconductor structure under an applied bonding force. An environment is provided to prevent oxides from forming on the solder bump structures and bonding pads during the bonding process. A scrubbing process is performed at a given scrubbing frequency and amplitude to scrub the micro solder bumps against the bonding pads in a direction perpendicular to the bonding. Heat is applied to at least the first semiconductor structure to melt and bond the micro solder bumps to the bonding pads. The first semiconductor structure is cooled down to solidify the molten solder. Coplanarity is maintained between the bonding surfaces of the semiconductor structures within a given tolerance during the scrubbing and cooling steps until solidification of the micro solder bumps.

A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

An array substrate includes a driver, a glass substrate having a driver mounting section where the driver is mounted, an anisotropic conductive material that is interposed between the driver and driver mounting section so as to electrically connect both and that at least includes a binder made of a thermosetting resin and conductive particles in the binder, and a heat supply part provided on at least the driver mounting section of the glass substrate for supplying heat to the anisotropic conductive material.

An apparatus relates generally to a microelectronic device. In such an apparatus, a first substrate has a first surface with first interconnects located on the first surface, and a second substrate has a second surface spaced apart from the first surface with a gap between the first surface and the second surface. Second interconnects are located on the second surface. Lower surfaces of the first interconnects and upper surfaces of the second interconnects are coupled to one another for electrical conductivity between the first substrate and the second substrate. A conductive collar is around sidewalls of the first and second interconnects, and a dielectric layer is around the conductive collar.

A photodetector-array and fabrication method thereof are disclosed. The photodetector-array includes a first and second semiconductor structures having respective active regions defining respective pluralities of active photodetectors and active readout integrated circuit pixels (RICPs) electronically connectable to one another respectively. The first and second semiconductor structures are made with different semiconductor materials/compositions having different first and second coefficients of thermal expansion (CTEs) respectively. The pitch distances of the active photodetectors and the pitch distances of the respective active RICPs are configured in accordance with the difference between the first and second CTEs, such that at high temperatures, at which electrical coupling between the first and second semiconductor structures is performed, the electric contacts of the active photodetectors and of their respective RICPs overlap. Accordingly, after the first and second semiconductor structures are bonded together, at least 99.5% of the active photodetector are electrically connected with their respective RICPs.

A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

Laser assisted bonding for semiconductor die interconnections is disclosed and may, for example, include forming flux on a circuit pattern on a circuit board, placing a semiconductor die on the circuit board where a bump on the semiconductor die contacts the flux, and reflowing the bump by directing a laser beam toward the semiconductor die. The laser beam may volatize the flux and make an electrical connection between the bump and the circuit pattern. A jig plate may be placed on the semiconductor die when the laser beam is directed toward the semiconductor die. Warpage may be reduced during heating or cooling of the semiconductor die by applying pressure to the jig plate. Jig bars may extend outward from the jig plate and may be in contact with the circuit board during the application of pressure to the jig plate. The jig plate may comprise one or more of: silicon, silicon carbide, and glass.

A fluxless bonding process is provided. An array of micro solder bumps of a first semiconductor structure is aligned to an array of bonding pads of a second semiconductor structure under an applied bonding force. An environment is provided to prevent oxides from forming on the solder bump structures and bonding pads during the bonding process. A scrubbing process is performed at a given scrubbing frequency and amplitude to scrub the micro solder bumps against the bonding pads in a direction perpendicular to the bonding. Heat is applied to at least the first semiconductor structure to melt and bond the micro solder bumps to the bonding pads. The first semiconductor structure is cooled down to solidify the molten solder. Coplanarity is maintained between the bonding surfaces of the semiconductor structures within a given tolerance during the scrubbing and cooling steps until solidification of the micro solder bumps.