A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality of semiconductor devices; forming one or two molding encapsulations; forming a plurality of electrical interconnections and removing the removable carrier. The method may further include a singulation process.

A semiconductor chip packaging structure without soldering wire and a packaging method thereof are disclosed. The semiconductor chip packaging structure comprises at least one packaging structure, and each packaging structure comprises a substrate, and a semiconductor chip is arranged on the substrate. Pins of the semiconductor chip are electrically connected to the conductive circuit formed by engraving or etching metal film or alloy film. The semiconductor chip packaging structure also comprises a packaging glue layer covering the semiconductor chip and the conductive circuit. The semiconductor chip packaging method includes steps of arranging a semiconductor chip on the substrate; forming a metal film or an alloy film around the semiconductor chip; etching the metal film or alloy film, to form the conductive circuit; and covering a packaging glue layer on the semiconductor chip and the conductive circuit. As a result, the production efficiency can be improved greatly.

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

A module includes: a resin insulating layer; a first electronic component mounted on a lower surface of the resin insulating layer and including first and second terminals on an upper surface of the first electronic component; a resin bonding layer bonding the lower surface of the resin insulating layer to the upper surface of the first electronic component; first and second wiring lines located on inner surfaces of at least one first through hole and at least one second through hole penetrating through the resin insulating layer and the resin bonding layer, respectively, located on an upper surface of the resin insulating layer, and connecting to the first and second terminals, respectively, wherein an opening penetrating through the resin insulating layer and the resin bonding layer is provided between the first and second terminals and between the first and second wiring lines, and no other metal layers are provided.

A semiconductor chip packaging structure without soldering wire and a packaging method thereof are disclosed. The semiconductor chip packaging structure comprises at least one packaging structure, and each packaging structure comprises a substrate, and a semiconductor chip is arranged on the substrate. Pins of the semiconductor chip are electrically connected to the conductive circuit formed by engraving or etching metal film or alloy film. The semiconductor chip packaging structure also comprises a packaging glue layer covering the semiconductor chip and the conductive circuit. The semiconductor chip packaging method includes steps of arranging a semiconductor chip on the substrate; forming a metal film or an alloy film around the semiconductor chip; etching the metal film or alloy film, to form the conductive circuit; and covering a packaging glue layer on the semiconductor chip and the conductive circuit. As a result, the production efficiency can be improved greatly.

A semiconductor device includes a molded body and an interconnection layer. The molded body includes a semiconductor chip, at least one terminal body disposed around the semiconductor chip and a resin member provided between the semiconductor chip and the terminal body. The molded body has a first surface, a second surface opposite to the first surface and a side surface connected to the first and second surfaces. The interconnection layer is provided on the first surface of the molded body. The interconnection layer includes an interconnect electrically connecting the semiconductor chip and the terminal body. The terminal body has first and second contact surfaces. The first contact surface is exposed at the first or second surface of the molded body. The second contact surface is connected to the first contact surface and exposed at the side surface of the molded body.

Disclosed are highly scalable fabrication methods for producing electronic circuits, devices, and systems. In one aspect, a fabrication method includes attaching an electronic component at a location on a substrate including a flexible and electrically insulative material; forming a template to encase the electronic component by depositing a material in a phase to conform on the surfaces of the electronic component and the substrate, and causing the material to change to solid form; and producing a circuit or electronic device by forming openings in the substrate to expose conductive portions of the electronic component, creating electrical interconnections coupled to at least some of the conductive portions in a selected arrangement on the substrate, and depositing a layer of an electrically insulative and flexible material over the electrical interconnections on the substrate to form a flexible base of the circuit, in which the produced circuit or electronic device is encased.

The invention relates to a method for integrating at least one interconnection for the manufacture of an integrated circuit, including a step of depositing at least one insulating body onto a substrate including a horizontal surface, said insulating body comprising a first wall extending from the horizontal surface of the substrate to a high point of said insulating body and a step of depositing a one-piece electrical structure which is made of an electrically conductive material and extends on the horizontal surface of the substrate and the first wall of the insulating body, the first wall being vertically angled by more than 10 m and having a rising slope extending from the horizontal surface of the substrate to the high point of said insulating body.

A method of manufacturing an electronic-component-embedded substrate includes forming a power-supplying metal layer on a base, forming through electrodes that are to be connected to the power-supplying metal layer on the power-supplying metal layer by an electrolytic plating method, forming a first wiring line by patterning the power-supplying metal layer, forming an interlayer insulating layer such that the interlayer insulating layer covers a portion of the first wiring line, and forming a second wiring line on at least a portion of the first wiring line and a portion of the interlayer insulating layer such that the second wiring line crosses, on the interlayer insulating layer, a portion of the first wiring line.

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.