A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top surface of the semiconductor substrate. The second integrated circuit is disposed on the dielectric layer of the first integrated circuit and includes a dummy opening extending through the second integrated circuit and having a metal layer covering the inner walls of the dummy opening and in contact with the dielectric layer, wherein the metal layer is electrically grounded or electrically floating.

A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.

Ultrathin and flexible electrical devices including circuit dies such as, for example, a capacitor chip, a resistor chip, and/or an inductor chip, and methods of making and using the same are provided. Circuit dies are attached to a major surface of a flexible substrate having channels Electrically conductive traces are formed in the channels, self-aligned with the circuit dies, and in direct contact with the bottom surface of the circuit dies.

A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

A method including forming a frame having an opening, forming a first metal layer, forming a first encapsulant, forming an insulation layer on the first metal layer, forming a first through-hole and a second through-hole penetrating the insulation layer and the first encapsulant, forming a second metal layer and a third metal layer, forming a second encapsulant, forming a first metal via and a second metal via penetrating the second encapsulant and a metal pattern layer on the second encapsulant, and forming a connection structure. The first metal layer and the second metal layer respectively are formed to extend to a surface of each of the first encapsulant and the frame, facing the metal pattern layer, and the first metal layer and the second metal layer are connected to the metal pattern layer through the first metal via and the second metal via having heights different from each other.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A semiconductor package includes a build-up structure; a semiconductor disposed on the build-up structure in a flip-chip manner and having a plurality of bumps penetrating therethrough; an electronic element disposed on the semiconductor chip; and an encapsulant formed on the build-up structure and encapsulating the semiconductor chip and the electronic element, thereby improving the product yield and the overall heat dissipating efficiency.

A semiconductor package includes a build-up structure; a semiconductor disposed on the build-up structure in a flip-chip manner and having a plurality of bumps penetrating therethrough; an electronic element disposed on the semiconductor chip; and an encapsulant formed on the build-up structure and encapsulating the semiconductor chip and the electronic element, thereby improving the product yield and the overall heat dissipating efficiency.