A wafer to wafer bonding method includes performing a plasma process on a bonding surface of a first wafer, pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, and bonding the first wafer to a second wafer. The plasma process has different plasma densities along a circumferential direction about a center of the first wafer. A middle portion of the first wafer protrudes after pressurizing the first wafer. The first wafer is bonded to the second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of flat particulate inorganic ceramic and/or metallic electrically insulating, and/or electrically conducting, and/or thermally conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures, such particles resulting in the reduction of the occurrence and size of gas voids within the adhesive bondline.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of flat particulate inorganic ceramic and/or metallic electrically insulating, and/or electrically conducting, and/or thermally conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures, such particles resulting in the reduction of the occurrence and size of gas voids within the adhesive bondline.

An electronic device package may include a solder mask that is positioned to mitigate leakage of resin or other adhesive material from the region of a die and die bond pad onto other surfaces of the package, such as surfaces of wire bond pads. One or more wire bond pads of the package may be formed from the same conductive layer as the die bond pad, and the solder mask may be positioned over a portions of the conductive layer located directly between such wire bond pads and the die bond pad. The solder mask may include portions disposed at one or more sides of the die bond pad. The solder mask may be formed over the package substrate prior to attachment of the die to the die bond pad.

Discussed is a device for self-assembling semiconductor light-emitting diodes for placing the semiconductor light-emitting diodes at predetermined positions on a substrate by using an electric field and a magnetic field, the substrate being accommodated in an assembly chamber accommodating a fluid, the device including a substrate chuck configured to dispose the substrate at an assembly position, wherein the substrate chuck includes a substrate support part configured to support the substrate on which an assembly electrode is formed, a rotating part configured to support the substrate support part, and a controller configured to control driving of the substrate chuck, wherein the substrate support part includes micro-holes for injecting a gas between the fluid and the substrate, and wherein the controller controls whether the gas is injected through the micro-holes according to whether the substrate is raised or lowered.

A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of flat particulate inorganic ceramic and/or metallic electrically insulating, and/or electrically conducting, and/or thermally conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures, such particles resulting in the reduction of the occurrence and size of gas voids within the adhesive bondline.