A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of flat particulate inorganic ceramic and/or metallic electrically insulating, and/or electrically conducting, and/or thermally conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures, such particles resulting in the reduction of the occurrence and size of gas voids within the adhesive bondline.

A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (21) of the surface free energy 2 and the surface free energy 1 is 10 mJ/m.sup.2 or more, where 1 represents the surface free energy of the pressure-sensitive adhesive layer and 2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

The disclosed technology generally relates to integrating semiconductor dies and more particularly to bonding semiconductor substrates. In an aspect, a method of bonding semiconductor substrates includes providing a first substrate and a second substrate. Each of the first substrate and the second substrate comprises a dielectric bonding layer comprising one or more a silicon carbon oxide (SiCO) layer, a silicon carbon nitride (SiCN) layer or a silicon carbide (SiC) layer. The method additionally includes, prior to bonding the first and second substrates, pre-treating each of the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate. Pre-treating includes a first plasma activation process in a plasma comprising an inert gas, a second plasma activation process in a plasma comprising oxygen, and a wet surface treatment including a water rinsing step or an exposure to a water-containing ambient. The method additionally includes bonding the first and the second substrates by contacting the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate to form a substrate assembly. The method further includes post-bond annealing the assembly.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

A compound and method of use thereof consisting of an A-staged thermoplastic-polyimide (TPI) adhesive, a viscous uncured liquid of polyamic-acid polymer (PAA), the TPI precursor, synthesized and dissolved in a polar aprotic organic solvent, and including, as appropriate, combinations of particulate ceramic and/or metallic thermally conducting, electrically insulating, and thermally conducting, electrically conducting fillers for interface-bonding to create a robust joint between surfaces with conventional lamination processes that utilize relatively moderate temperatures and applied pressures.

Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Provided among other things is an electrical device comprising: a first component that is a semiconductor or an electrical conductor; a second component that is an electrical conductor; and a strong, heat stable junction there between including an intermetallic bond formed of: substantially (a) indium (In), tin (Sn) or a mixture thereof, and (b) substantially nickel (Ni). The junction can have an electrical contact resistance that is small compared to the resistance of the electrical device.