A semiconductor device includes: a base material having a first terminal; a semiconductor chip having a first electrode pad electrically connected with the first terminal, a second electrode pad to which a power supply potential is to be supplied, and a third electrode pad to which a reference potential is to be supplied, and mounted on the base material via a first member; a chip capacitor having a first electrode and a second electrode, and mounted on the semiconductor chip via a second member; a first wire electrically connecting the first electrode pad with the first terminal; a second wire electrically connecting the second electrode pad with the first electrode without going through the base material; and a third wire electrically connecting the third electrode pad with the second electrode without going through the base material.

A bonding method is provided. A sheet structure is placed on a substrate surface, and a surface roughness of a surface of the sheet structure is less than or equal to 1.0 micrometer. A carbon nanotube structure is laid on the surface of the sheet structure. Two ends of the carbon nanotube structure are in direct contact with the substrate surface. An organic solvent is added to the two ends of the carbon nanotube structure. An object is laid on the carbon nanotube structure, and a surface of the object being in direct contact with the carbon nanotube structure has a surface roughness less than or equal to 1.0 micrometer.

A bonding method is provided. A sheet structure is placed on a substrate surface, and a surface roughness of a surface of the sheet structure is less than or equal to 1.0 micrometer. A carbon nanotube structure is laid on the surface of the sheet structure. Two ends of the carbon nanotube structure are in direct contact with the substrate surface. An organic solvent is added to the two ends of the carbon nanotube structure. An object is laid on the carbon nanotube structure, and a surface of the object being in direct contact with the carbon nanotube structure has a surface roughness less than or equal to 1.0 micrometer.

A semiconductor device includes a metal chip mounting member and a semiconductor chip bonded to the chip mounting member through a metal sintered material, wherein the metal sintered material includes a first portion overlapping the semiconductor chip in a plan view, and includes a second portion surrounding the semiconductor chip in the plan view, and wherein a porosity ratio of the first portion is greater than or equal to 1% and less than 15%, and a porosity ratio of the second portion is greater than or equal to 15% and less than or equal to 50%.

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

Method and device for improved die bonding. In some embodiments, a bonding device includes a heating element configured to heat air. The bonding device also includes an application element having a plurality of holes configured to apply the heated air to a die, the application element is characterized by an arrangement of the plurality of holes that satisfies one or more directionality criteria. The bonding device further includes a controller configured to control the heating element and to set the temperature of the heated air expelled through the plurality of holes of the application element in order to satisfy one or more bonding criteria.

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.

A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.

A material includes a base resin; a solvent; and a foaming agent and a photosensitizer, and/or a substance that serves as a foaming agent and a photosensitizer.