In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.

An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is In.sub.x1Al.sub.y1Ga.sub.(1-x1-y1)N, with 0≤xl≤1, 0≤yl≤1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.

Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.

A semiconductor package includes a carrier having a recess, a semiconductor die arranged on the carrier such that a first side of the semiconductor die faces the carrier, and a contact clip arranged over a second side of the semiconductor die, opposite the first side. The contact clip includes a lowered part. The lowered part is arranged in the recess.

According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

A method of attaching a semiconductor chip to a lead frame, including A) providing a semiconductor chip, B) applying a solder metal layer sequence on the semiconductor chip, C) providing a lead frame, D) applying a metallization layer sequence on the lead frame, E) applying the semiconductor chip on the lead frame via the solder metal layer sequence and the metallization layer sequence, and F) heating the arrangement produced under E) to attach the semiconductor chip to the lead frame, wherein the solder metal layer sequence includes a first metallic layer including an indium-tin alloy, a barrier layer arranged above the first metallic layer, and a second metallic layer including gold arranged between the barrier layer and the semiconductor chip.

A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.