A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

Provided is an electronic package, including a first substrate of a first conductive structure and a second substrate of a second conductive structure, where a first conductive layer, a bump body and a metal auxiliary layer of the first conductive structure are sequentially formed on the first substrate, and a metal pillar, a second conductive layer, a metal layer and a solder layer of the second conductive structure are sequentially formed on the second substrate, such that the solder layer is combined with the bump body and the metal auxiliary layer to stack the first substrate and the second substrate. Therefore, the arrangement of the bump body and the metal auxiliary layer allows complete reaction of the IMCs after reflowing the solder layer, and the volume of the conductive structures will not continue to shrink. As such, the problem of cracking of the conductive structures can be effectively averted.

Provided is an electronic package, including a first substrate of a first conductive structure and a second substrate of a second conductive structure, where a first conductive layer, a bump body and a metal auxiliary layer of the first conductive structure are sequentially formed on the first substrate, and a metal pillar, a second conductive layer, a metal layer and a solder layer of the second conductive structure are sequentially formed on the second substrate, such that the solder layer is combined with the bump body and the metal auxiliary layer to stack the first substrate and the second substrate. Therefore, the arrangement of the bump body and the metal auxiliary layer allows complete reaction of the IMCs after reflowing the solder layer, and the volume of the conductive structures will not continue to shrink. As such, the problem of cracking of the conductive structures can be effectively averted.

Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.

Anisotropic conductive film produced that a light-transmitting transfer die having openings with conductive particles disposed therein is prepared, and photopolymerizable insulating resin squeezed into openings to transfer conductive particles onto the surface of the photopolymerizable insulating resin layer, first connection layer is formed which has a structure in which conductive particles are arranged in a single layer in a plane direction of photopolymerizable insulating resin layer and the thickness of photopolymerizable insulating resin layer in central regions between adjacent ones of the conductive particles is smaller than thickness of photopolymerizable insulating resin layer in regions in proximity to conductive particles; first connection layer is irradiated with ultraviolet rays through light-transmitting transfer die; release film is removed from first connection layer; second connection layer is formed on the surface of first connection layer opposite to light-transmitting transfer die; and third connection layer is formed on the surface of first connection layer.

Provided is an anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also provided is an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (μm), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

Provided is an anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also provided is an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (μm), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

In an embodiment, an article of manufacture includes a first component, a second component, and a thermal interface material. The thermal interface material is disposed between the first component and the second component and includes a polymeric phase-change material. In another embodiment, an article of manufacture includes a first component, a second component, and a thermal interface material disposed between the first component and the second component, the thermal interface material including a polymeric phase-change material, the polymeric phase-change material including a block copolymer formed from a diene, the diene formed from a vinyl-terminated fatty acid monomer having a chemical formula C.sub.2H.sub.4—R—C(O)OH and an ethylene glycol monomer having a chemical formula C.sub.2nH.sub.4n+2O.sub.n+1.