Provided are a semiconductor element bonding apparatus and a semiconductor element bonding method that do not cause a bonding material to protrude and also ensure adhesion, even when there are variations in a thickness of a semiconductor element or a workpiece and even when there are projections and depressions on surfaces. A semiconductor element bonding apparatus includes disposing means for disposing a workpiece and a semiconductor element at positions facing each other, moving means for moving the workpiece or the semiconductor element in a vertical direction, displacement measuring means for measuring displacement of the workpiece or the semiconductor element in the vertical direction, load measuring means for measuring a contact load between the workpiece and the semiconductor element with the bonding material interposed therebetween, and elastic modulus calculating means for calculating an elastic modulus from results of the measurement by the displacement measuring means and the load measuring means.

Provided are a semiconductor element bonding apparatus and a semiconductor element bonding method that do not cause a bonding material to protrude and also ensure adhesion, even when there are variations in a thickness of a semiconductor element or a workpiece and even when there are projections and depressions on surfaces. A semiconductor element bonding apparatus includes disposing means for disposing a workpiece and a semiconductor element at positions facing each other, moving means for moving the workpiece or the semiconductor element in a vertical direction, displacement measuring means for measuring displacement of the workpiece or the semiconductor element in the vertical direction, load measuring means for measuring a contact load between the workpiece and the semiconductor element with the bonding material interposed therebetween, and elastic modulus calculating means for calculating an elastic modulus from results of the measurement by the displacement measuring means and the load measuring means.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

A backplane can have a non-planar top surface. Insulating material portions including planar top surface regions located within a same horizontal plane are formed over the backplane. A two-dimensional array of metal plate clusters is formed over the insulating material portions. Each of the metal plate clusters includes a plurality of metal plates. Each metal plate includes a horizontal metal plate portion overlying a planar top surface region and a connection metal portion connected to a respective metal interconnect structure in the backplane. A two-dimensional array of light emitting device clusters is bonded to the backplane through respective bonding structures. Each light emitting device cluster includes a plurality of light emitting devices overlying a respective metal plate cluster.

A display device includes a substrate having flexibility, a first surface and a second surface opposing the first surface, a display part arranged with a plurality of pixels above the first surface of the substrate, a frame part having a drive element for driving the plurality of pixels arranged around the display part, a mounting part mounted above the first surface of the substrate and including an individual circuit element and a connection element, a first adhesive layer above the second surface of the substrate and opposing the display part and the frame part, a first support film above the first adhesive layer, a second adhesive layer above the second surface of the substrate and opposing the mounting part, and a second support film above the second adhesive layer, wherein the first adhesive layer and the first support film separated from the second adhesive layer and the second support film.

A display device includes a substrate having flexibility, a first surface and a second surface opposing the first surface, a display part arranged with a plurality of pixels above the first surface of the substrate, a frame part having a drive element for driving the plurality of pixels arranged around the display part, a mounting part mounted above the first surface of the substrate and including an individual circuit element and a connection element, a first adhesive layer above the second surface of the substrate and opposing the display part and the frame part, a first support film above the first adhesive layer, a second adhesive layer above the second surface of the substrate and opposing the mounting part, and a second support film above the second adhesive layer, wherein the first adhesive layer and the first support film separated from the second adhesive layer and the second support film.

The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.