Patent classifications
H01L2224/83345
SEMICONDUCTOR OPTICAL MODULE PROVIDING CARRIER WITH STRUCTURE FOR RECEIVING EXCESS SOLDER
An optical module that includes at least one semiconductor optical device, a carrier, a housing, and eutectic alloy that fixes the carrier to the housing is disclosed. The carrier mounts a component that couples with the semiconductor optical device. The housing, which includes a side wall made of ceramics and a base made of metal to form a space that encloses the semiconductor optical device, the carrier, and the component therein. The carrier provides a room facing the base and the side wall, where the room receives excess eutectic alloy oozing out from a gap between the carrier and the base.
Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation
A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.
Array substrate, light-emitting substrate and display device
An array substrate includes connecting leads, a signal channel region extending in a first direction, a first power voltage lead, and a second power voltage lead. Any one of the signal channel region includes at least two control region columns extending in the first direction, and any one of the control region columns includes a plurality of control regions arranged along the first direction. Any one of the control regions includes a pad connecting circuit and a first pad group for bonding a microchip, the first pad group is electrically connected to the first power voltage lead. The pad connection circuit includes a plurality of second pad groups, and is provided with a first end electrically connected to the first pad group, and a second end electrically connected to the second power voltage lead.
COMPONENT MODULE AND POWER MODULE
The disclosed component module includes a component comprising at least one electric contact to which at least one porous contact piece is connected; the component module further includes a cooling system for fluid-based cooling, said cooling system comprising one or more cooling ducts which are formed by pores of the porous contact piece. The disclosed power module comprises a component module of said type.
SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR A SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
Massively parallel transfer of microLED devices
MicroLED devices can be transferred in large numbers to form microLED displays using processes such as pick-and-place, thermal adhesion transfer, or fluidic transfer. A blanket solder layer can be applied to connect the bond pads of the microLED devices to the terminal pads of a support substrate. After heating, the solder layer can connect the bond pads with the terminal pads in vicinity of each other. The heated solder layer can correct misalignments of the microLED devices due to the transfer process.
Method for bonding a hermetic module to an electrode array
A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.
Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
THREE DIMENSIONAL DEVICE INTEGRATION METHOD AND INTEGRATED DEVICE
A method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.