A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

A recording element substrate is bonded to an FPC in at least a part of a region of a second face between a liquid supply port and an edge of the recording element substrate, and an electric connection part is provided in which a wiring conductor and a pad are electrically connected to each other by a bonding wire.

In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

A package structure is disclosed, the package structure includes a substrate, a chip, a bonding layer, and a coating. A plurality of grooves are disposed on the substrate. Silver bonding materials are disposed in the grooves and on a surface of the substrate, to form the bonding layer. The chip is connected to the substrate by using the bonding layer. The grooves are symmetrically arranged along a first and a second axis that are perpendicular to each other, a vertical projection of the chip on the substrate is centrosymmetric about the first and the second axis, and the vertical projection of the chip on the substrate covers a partial area of an outer-ring groove which faces a periphery of the chip. The coating covers a surface that is of the bonding layer and not in contact with the substrate or the chip, used to prevent migration of silver ions.

A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 m to 10 m. A method of manufacturing a metal surface with such micropores also is described.

IC package including a material preform comprising graphite. The material preform may have a thermal conductivity higher than that of other materials in the package and may therefore mitigate the formation of hot spots within an IC die during device operation. The preform may have high electrical conductivity suitable for EMI shielding. The preform may comprise a graphite sheet that can be adhered to a package assembly with an electrically conductive adhesive, applied, for example over an IC die surface and a surrounding package dielectric material. Electrical interconnects of the package may be coupled to the graphite sheet as an EMI shield. The package preform may be grounded to a reference potential through electrical interconnects of the package, which may be further coupled to a system-level ground plane. System-level thermal solutions may interface with the package-level graphite sheet.

Metal-to-metal adhesion joints are described as a manner to hold down micro devices to a carrier substrate within the context of a micro device transfer manufacturing process. In accordance with embodiments, the metal-to-metal adhesion joints must be broken in order to pick up the micro devices from a carrier substrate, resulting in micro devices with nubs protruding from bottom contacts of the micro devices. Once integrated, the micro devices are bonded to a receiving substrate, the nubs may be embedded in a metallic joint, or alternatively be diffused within the metallic joint as interstitial metallic material that is embedded within the metallic joint.

In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

Provided are a semiconductor element bonding apparatus and a semiconductor element bonding method that do not cause a bonding material to protrude and also ensure adhesion, even when there are variations in a thickness of a semiconductor element or a workpiece and even when there are projections and depressions on surfaces. A semiconductor element bonding apparatus includes disposing means for disposing a workpiece and a semiconductor element at positions facing each other, moving means for moving the workpiece or the semiconductor element in a vertical direction, displacement measuring means for measuring displacement of the workpiece or the semiconductor element in the vertical direction, load measuring means for measuring a contact load between the workpiece and the semiconductor element with the bonding material interposed therebetween, and elastic modulus calculating means for calculating an elastic modulus from results of the measurement by the displacement measuring means and the load measuring means.