A method includes applying a die attach material to a die pad of an integrated circuit package. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit package to mitigate delamination between the integrated circuit die and the die pad.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A semiconductor package including an organic interposer includes: first and second semiconductor chips each having active surfaces having connection pads disposed thereon; the organic interposer disposed on the active surfaces of the first and second semiconductor chips and including a wiring layer electrically connected to the connection pads; barrier layers disposed onside surfaces of the first and second semiconductor chips; and an encapsulant encapsulating at least portions of the first and second semiconductor chips.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

An assembly that includes a first substrate, a second substrate, and a pair of bonding layers disposed between and bonded to the first and second substrates. The assembly further includes a solder layer disposed between the pair of bonding layers such that the solder layer is isolated from contacting the first substrate and the second substrate. The solder layer has a low melting temperature relative to a high melting temperature of the bonding layers. A coating is disposed over at least the pair of bonding layers and the solder layer such that the coating encapsulates the solder layer between the pair of bonding layers. The solder layer melts into a liquid form when the assembly operates at a temperature above the low melting temperature of the solder layer and the coating maintains the liquid form of the solder layer between the pair of bonding layers.

A method of manufacturing a semiconductor device according to an embodiment includes forming a bonding layer containing a metal on a first surface of a first semiconductor substrate having the first surface and a first back surface; bonding the first semiconductor substrate and a second semiconductor substrate having a second surface and a second back surface so that the second surface is in contact with the bonding layer; and forming a coating layer covering the bonding layer on an outer peripheral portion of the second semiconductor substrate.

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

A semiconductor package including an organic interposer includes: first and second semiconductor chips each having active surfaces having connection pads disposed thereon; the organic interposer disposed on the active surfaces of the first and second semiconductor chips and including a wiring layer electrically connected to the connection pads; barrier layers disposed onside surfaces of the first and second semiconductor chips; and an encapsulant encapsulating at least portions of the first and second semiconductor chips.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

The present disclosure provides a semiconductor structure including a first chip having a first dielectric surface, a second chip having a second dielectric surface facing the first dielectric surface and maintaining a distance thereto, and an air gap between the second dielectric surface and the first dielectric surface. The first chip includes a plurality of first conductive lines in proximity to the first dielectric surface and parallel to each other, two adjacent first conductive lines each having a sidewall partially exposed from the first dielectric surface. The present disclosure further provides a method for manufacturing the semiconductor structure described herein.