A semiconductor structure includes a first substrate including a first pad thereover, a second substrate including a bump thereover and a dielectric material. The first pad includes an inner portion and an outer portion being higher than and surrounding the inner portion. The bump is bonded to the inner portion and surrounded by the outer portion. The dielectric material is disposed between the first substrate and the second substrate to encapsulate the first pad and the bump.

A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first heat conductive layer between the heat-spreading wall structure and the chip. The chip package structure includes a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The chip package structure includes a heat-spreading lid over the substrate and covering the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

A method for fabricating a semiconductor device with a heterogeneous solder joint includes: providing a semiconductor die; providing a coupled element; and soldering the semiconductor die to the coupled element with a first solder joint. The first solder joint includes: a solder material including a first metal composition; and a coating including a second metal composition, different from the first metal composition, the coating at least partially covering the solder material. The second metal composition has a greater stiffness and/or a higher melting point than the first metal composition.

The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein a first microelectronic device having through-silicon vias may be stacked with a second microelectronic device and used in a bumpless build-up layer package.

An integrated circuit package and a method of forming the same are provided. A method includes stacking a plurality of integrated circuit dies on a wafer to form a die stack. A bonding process is performed on the die stack. The bonding process mechanically and electrically connects adjacent integrated circuit dies of the die stack to each other. A dam structure is formed over the wafer. The dam structure surrounds the die stack. A first encapsulant is formed over the wafer and between the die stack and the dam structure. The first encapsulant fills gaps between the adjacent integrated circuit dies of the die stack. A second encapsulant is formed over the wafer. The second encapsulant surrounds the die stack, the first encapsulant and the dam structure.

Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise connection verification for a first one or more mounted components prior to additional assembly.

A method for fabricating an electronic device package includes providing a carrier, disposing a semiconductor chip onto the carrier, the semiconductor chip having a contact pad on a main face thereof remote from the carrier, applying a contact element onto the contact pad, applying a dielectric layer on the carrier, the semiconductor chip, and the contact element, and applying an encapsulant onto the dielectric layer.

Illustrative embodiments of anisotropic conductive adhesive (ACA) and associated methods are disclosed. In one illustrative embodiment, the ACA may comprise a binder curable using UV light and a plurality of particles suspended in the binder. Each of the plurality of particles may comprise a ferromagnetic material coated with a layer of electrically conductive material. The electrically conducting material may form electrically conductive and isolated parallel paths when the ACA is cured using UV light after being subjected to a magnetic field.

Provided are a display panel, a preparation method thereof, and a display device. The display panel includes a plurality of sub-panels. Each sub-panel includes first substrate, second substrate, bezel adhesive located therebetween, a plurality of bank structures, and a plurality of light-emitting elements. At least one light-emitting element forms a pixel unit. Each bank structure is located between adjacent pixel units. Seaming adhesive is located between adjacent sub-panels. The sub-panels share a same first substrate, and the seaming adhesive is disposed on the same first substrate. The first substrate includes a display region and a non-display region surrounding the display region. The light-emitting elements and the bank structures are located in the display region, and the bezel adhesive is located in the non-display region. In this manner, splicing gaps between adjacent sub-panels can be effectively reduced, and thus the display effect of the display panel can be improved.