A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.

A power module (PM) includes: an insulating substrate; a semiconductor device disposed on the insulating substrate, the semiconductor device including electrodes on a front surface side and a back surface side thereof; and a graphite plate having an anisotropic thermal conductivity, the graphite plate of which one end is connected to the front surface side of the semiconductor device and the other end is connected to the insulating substrate, wherein heat of the front surface side of the semiconductor device is transferred to the insulating substrate through the graphite plate. There is provide an inexpensive power module capable of reducing a stress and capable of exhibiting cooling performance not inferior to that of the double-sided cooling structures.

Provided is a semiconductor module comprising a semiconductor chip, a lead frame including a chip connection portion configured to connect the lead frame to the semiconductor chip, and a bonding member configured to connect the chip connection portion and the semiconductor chip, wherein the semiconductor chip includes a semiconductor substrate, an active portion provided on the semiconductor substrate, and a transverse protective film provided above the active portion and provided to traverse the active portion in a top view, wherein the chip connection portion includes a center portion which covers a center of the transverse protective film in a top view and a first cut-out portion provided from a first end side of the chip connection portion towards the center portion.

Provided is a semiconductor module comprising a semiconductor chip, a lead frame including a chip connection portion configured to connect the lead frame to the semiconductor chip, and a bonding member configured to connect the chip connection portion and the semiconductor chip, wherein the semiconductor chip includes a semiconductor substrate, an active portion provided on the semiconductor substrate, and a transverse protective film provided above the active portion and provided to traverse the active portion in a top view, wherein the chip connection portion includes a center portion which covers a center of the transverse protective film in a top view and a first cut-out portion provided from a first end side of the chip connection portion towards the center portion.

A furcated clip includes a removable collar, and an arrangement of stems attached to the removable collar. The stems are configured for contacting bond pads of a semiconductor die and connecting the bond pads to leadframe posts of a leadframe structure.

A clip for connecting an electronic component with a carrier in a package is provided. The clip includes a clip body having a component connection portion configured to be connected with the electronic component to be mounted on the carrier, and a carrier connection portion configured to be connected with the carrier. The clip further includes at least one locking recess in a surface portion of the clip body, the surface portion being configured to face the carrier. The at least one locking recess is configured to accommodate material of an encapsulant of the package so as to lock the encapsulant and the clip. A corresponding method of manufacturing the package is also provided.

A clip for connecting an electronic component with a carrier in a package is provided. The clip includes a clip body having a component connection portion configured to be connected with the electronic component to be mounted on the carrier, and a carrier connection portion configured to be connected with the carrier. The clip further includes at least one locking recess in a surface portion of the clip body, the surface portion being configured to face the carrier. The at least one locking recess is configured to accommodate material of an encapsulant of the package so as to lock the encapsulant and the clip. A corresponding method of manufacturing the package is also provided.

A semiconductor module includes: a supporting substrate; a conductive substrate bonded to the supporting substrate; a switching semiconductor element electrically bonded to the conductive substrate; and a conducting member that forms a path of a main circuit current switched by the semiconductor element. The conducting member is arranged to overlap with the obverse surface of the conductive substrate as viewed in a thickness direction of the supporting substrate. The conducting member is formed with an opening that overlaps with the obverse surface of the conductive substrate and does not overlap with the semiconductor element as viewed in the thickness direction.

The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies. The substrate has a top surface with a first trace and a second trace. The first plurality of vertical power devices and the second plurality of vertical power devices are electrically coupled to form part of a power circuit. The first plurality of vertical power devices is electrically and mechanically directly coupled between the first trace and a bottom of a first elongated bar of the first terminal assembly. The second plurality of vertical power devices are electrically and mechanically directly coupled between the second trace and a bottom of a second elongated bar of the second terminal assembly.

A semiconductor module includes: a conductive substrate having an obverse surface and a reverse surface spaced apart in a thickness direction; a semiconductor element electrically bonded to the obverse surface and having a switching function; and a conducting member that forms a path of a main circuit current switched by the semiconductor element. The semiconductor element has a rectangular shape with four corners as viewed in the thickness direction. The conducting member includes a portion overlapping with the semiconductor element as viewed in the thickness direction. The conducting member do not overlap with at least three of the four corners of the semiconductor element.