Methods and apparatus for providing an interconnection including a stack of wirebond balls having a selected impedance. The wirebond balls may have a size, which may comprise a radius, configured for the selected impedance. The stack may comprise a number of wirebond balls configured for the selected impedance and/or may comprise a material selected for the selected impedance. In embodiments, the selected impedance is primarily resistive (e.g., 50 Ohms), such that the overall reactance is minimized.

A semiconductor package includes a package substrate, a die stack having a first sub-stack part and a second sub-stack part, an interface chip, and a bonding wire structure. The bonding wire structure includes a first signal wire connecting first signal die pads included in the first sub-stack part to each other, a first signal extension wire connecting the first signal wire to the interface chip, a second signal wire connecting second signal die pads included in the first sub-stack part to each other, a second signal extension wire connecting the second signal wire to the interface chip, an interpose wire connecting interpose die pads included in the first and second sub-stack parts to each other and electrically connecting the interpose die pads to the interface chip, and a shielding wire branched from the interpose wire.

A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

Methods and apparatus for a signal isolator having enhanced creepage characteristics. In embodiments, a signal isolator IC package comprises a leadframe including a die paddle having a first surface to support a die and an exposed second surface. A die is supported by a die paddle wherein a width of the second surface of the die paddle is less than a width of the die.

A semiconductor package may include a package substrate, a support structure on the package substrate and having a cavity therein, and at least one first semiconductor chip on the package substrate in the cavity. The support structure may have a first inner sidewall facing the cavity, a first top surface, and a first inclined surface connecting the first inner sidewall and the first top surface. The first inclined surface may be inclined with respect to a top surface of the at least one first semiconductor chip.

A semiconductor device includes a power MOS chip having a source electrode on a surface and a control chip mounted on a portion of the power MOS chip, wherein, viewing from a first outer edge of the power MOS chip extending in a first direction to the control chip, a first column bonding pad and a second column bonding pad are formed in a region of the source electrode where the control chip is not mounted, and wherein a distance between a second outer edge of the power MOS chip extending in a second direction and the first column bonding pad is longer than a distance between the second outer edge and the second column bonding pad.

A semiconductor device, including a semiconductor chip having a first main electrode on a front surface thereof, the first main electrode having a plurality of bonded regions, and a plurality of wires that are bonded respectively to the plurality of bonded regions of the first main electrode. In a top view of the semiconductor device, the plurality of bonded regions do not overlap in either a predetermined first direction, or a second direction perpendicular to the predetermined first direction.

A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.

A package structure including a lead frame structure, a die, an adhesive layer, and at least one three-dimensional (3D) printing conductive wire is provided. The lead frame structure includes a carrier and a lead frame. The carrier has a recess. The lead frame is disposed on the carrier. The die is disposed in the recess. The die includes at least one pad. The adhesive layer is disposed between a bottom surface of the die and the carrier and between a sidewall of the die and the carrier. The 3D printing conductive wire is disposed on the lead frame, the adhesive layer, and the pad, and is electrically connected between the lead frame and the pad.

A memory package includes a package substrate including power wiring and ground wiring. The memory package also includes a memory controller disposed over an upper surface of the package substrate and electrically connected to the power wiring and the ground wiring. The memory package further includes a memory chip disposed over the memory controller and electrically connected to the power wiring and the ground wiring. The memory package additionally includes a band pass filter disposed at one side of the memory controller over the upper surface of the package substrate and including an inductor and a capacitor which are connected in series. The inductor and the capacitor connected in series are electrically connected between the power wiring and the ground wiring.