A package structure including a substrate, a semiconductor device, a heat spreader, and an adhesive layer is provided. The semiconductor device is bonded onto the substrate, wherein an angle θ is formed between one sidewall of the semiconductor device and one sidewall of the substrate, 0°<θ<90°. The heat spreader is disposed over the substrate, wherein the semiconductor device is disposed between the heat spreader and the substrate. The adhesive layer is surrounding the semiconductor device and attaching the heat spreader onto the substrate, wherein the adhesive layer has a first opening misaligned with one of corners of the semiconductor device closest to the first opening.

To prevent damage of a semiconductor package by deformation of members forming the semiconductor package in accordance with a change in temperature. A semiconductor device is provided with a frame, a semiconductor chip, and a lid. The frame includes a bottom and a wall arranged so as to be adjacent to the bottom and formed into an annular shape, the wall provided with a protrusion continuous in a circumferential direction of the annular shape on an upper surface. The semiconductor chip is placed on the bottom surrounded by the wall. The lid is adhered to the frame at an upper surface.

An example semiconductor package comprises a ceramic header having a top surface and a cavity formed within the ceramic header. The cavity is open at the top surface. A semiconductor die is mounted within the cavity of the ceramic header. A lid structure is coupled to the top surface of the ceramic header. The lid structure and ceramic header form a portion of a package enclosing the semiconductor die. One or more silver tubes are in contact with a first surface of the semiconductor die and with a first surface of the lid structure. A seal ring is located between the top surface of the ceramic header and the lid structure. The seal ring couples the lid structure to the ceramic header. The one or more silver tubes are hollow and filled with a getter material.

In one example, an electronic device includes a substrate having a substrate top side, a substrate bottom side opposite to the substrate top side. A first electronic component is connected to the substrate top side and having a first electronic component top side distal to the substrate top side. A second electronic is connected to the substrate top side, laterally spaced apart from the first electronic component, and having a second electronic component top side distal to the substrate top side. A lid is connected to the substrate top side, covering the first electronic component and the second electronic component. The lid includes a lid ceiling; and a lid wall extending from the lid ceiling and defining a lid periphery. A dam structure is connected to the first electronic device top side and the lid ceiling within the lid periphery and having a vent. A first interface material is over the first electronic component top side and contained within the dam structure. A second interface material is over the second electronic component top side and connected to the lid ceiling, where the dam structure separates the first interface material from the second interface material. The first interface material has a higher thermal conductivity than the second interface material. Other examples and related methods are also disclosed herein.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A sensor element is disclosed. In an embodiment a sensor element includes a substrate, a light emitting semiconductor chip arranged with a mounting face on a mounting face of the substrate, wherein the semiconductor chip has a smaller mounting face than the substrate, wherein a border area of the mounting face of the substrate circumvents the semiconductor chip, wherein on a bottom side of the semiconductor chip electrical contacts are arranged, and wherein the substrate is transparent for radiation of the semiconductor chip, a carrier, wherein the bottom side of the semiconductor chip is arranged on a mounting face of the carrier, wherein the carrier includes further electrical contacts on the mounting face, and wherein the contacts of the semiconductor chip and the further contacts of the carrier are connected, a sealing member arranged between the mounting face of the carrier and the border area of the substrate, wherein the sealing member seals a sealing area between the substrate and the carrier, wherein a recess is arranged in the mounting face of the carrier, and an optical sensor arranged in the recess.

An electronic package is provided, which includes: an insulating layer; an electronic element embedded in the insulating layer and having a sensing area exposed from the insulating layer; and a circuit layer formed on the insulating layer and electrically connected to the electronic element, thereby reducing the thickness of the overall package structure.

A wiring board (2) is provided on a heat radiation plate (1). A semiconductor chip (8) is provided on the wiring board (2). A case housing (10) is provided on the heat radiation plate (1) and surrounds the wiring board (2) and the semiconductor chip (8). Adhesive agent (11) bonds a lower surface of the case housing (10) and an upper surface peripheral portion of the heat radiation plate (1). A sealing material (13) is filled in the case housing (10) and covers the wiring board (2) and the semiconductor chip (8). A step portion (16,17) is provided to at least one of the lower surface of the case housing (10) and the upper surface peripheral portion of the heat radiation plate (1). A side surface of the heat radiation plate (1) and an outer side surface of the case housing (10) are flush with each other.

A method for fabricating an electronic device includes fixing a rear face of an integrated-circuit chip to a front face of a support wafer. An infused adhesive is applied in the form of drops or segments that are separated from each other. A protective wafer is applied to the infused adhesive, and the infused adhesive is cured. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. A closed intermediate peripheral ring is deposited on the integrated-circuit chip outside the cured infused adhesive, and an encapsulation block is formed such that it surrounds the chip, the protective wafer and the closed intermediate peripheral ring.

A method for fabricating an electronic device includes fixing a rear face of an integrated-circuit chip to a front face of a support wafer. An infused adhesive is applied in the form of drops or segments that are separated from each other. A protective wafer is applied to the infused adhesive, and the infused adhesive is cured. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. A closed intermediate peripheral ring is deposited on the integrated-circuit chip outside the cured infused adhesive, and an encapsulation block is formed such that it surrounds the chip, the protective wafer and the closed intermediate peripheral ring.