Systems and methods for controlling operation of a power converter based on grid conditions are provided. In particular, a first gating voltage can be applied to a switching element of a power converter associated with a wind-driven power generation system. The first gating voltage can be greater than a threshold voltage for the switching element. A grid event associated with an electrical grid coupled to the power generation system can be detected. A second gating voltage can be applied to the gate of the switching element during the detected grid event. The second gating voltage can be greater than the first gating voltage.

A driver for improving reliability of a switch in a power device, comprising one or more sensors configured to sense an operational parameter of a power device. The driver comprises a controller configured to receive one or more sensor values from the respective sensors. The controller is configured to adjust a driving pulse according to the sensor values. The controller is configured to apply the driving pulse to one or more control terminal of one or more switch of the power device.

An overvoltage protection device including an output stage, a first switch and a first load providing circuit is provided. The output stage has a first input terminal to receive a first signal, and generates an output signal at an output terminal of the output stage according to the first signal. A first terminal of the first switch is coupled to the first input terminal of the output stage, and a control terminal of the first switch receives a second signal. The first signal is the delayed second signal. The first load providing circuit is coupled to a second terminal of the first switch. The first load providing circuit provides an impedance to the first input terminal when the first switch is turned on.

An electronic switch includes a current sensor and a semiconductor switch having two semiconductors configured to carry and disconnect a current in both directions, and a control circuit configured to operate the semiconductor switch by pulse-width modulation and to determine a phase control factor of the pulse-width modulation as a function of measurement values of the current sensor such that in fault-free operation, the electronic switch remains in the ON state and that two limit values exist for protection. The electronic switch is operated by pulse-width modulation when a first one of the two limit values is exceeded, and the electronic switch is switched off when a second one of the two limit values, which is greater than the first limit value, is exceeded. The electronic switch is configured to reduce an edge steepness of a switching edge as the phase control factor decreases.

A gate drive device for a switching element includes: a surge voltage detection circuit for detecting a surge voltage when the switching element is turned off; a delay circuit for outputting a timing signal when a predetermined delay time elapses after a turn-off start signal is input; and a driving current output unit for starting to supply a first gate drive current to the switching element when the turn-off start signal is input, and for starting to supply a second gate drive current to the switching element when the delay circuit outputs the timing signal. The delay circuit is configured to change and set the delay time when the surge voltage is different from a target value.

In a transistor turnoff system, a transistor control circuit is configured to adjust a control voltage at a transistor control output responsive to a comparison signal at a control input. The control voltage has a slew rate. A comparator has a comparator output and first and second comparator inputs. The first comparator input is coupled to the transistor control output. The comparator is configured to: provide the comparison signal at the comparator output based on a reference voltage at the second comparator input; and deactivate the transistor control circuit by changing a state of the comparison signal responsive to the control voltage falling below the reference voltage. A slew-rate compensator is configured to increase the reference voltage by a compensation voltage that compensates for a time delay of the comparator or the transistor control circuit. The compensation voltage is proportional to the slew rate.

This invention provides a switch control circuit and a switch circuit. When a main transistor on-time reaches a constant on-time, whether an inductor current reaches an instruction current is detected; if the inductor current fails to reach the instruction current, the main transistor on-time is prolonged; the main transistor is turned off and the auxiliary transistor is turned on until the inductor current reaches the instruction current or exceeds the instruction current by a certain threshold; when the main transistor is turned off and the auxiliary transistor is turned on, the inductor current is detected in real time to check whether the inductor current is smaller than the instruction current, and the auxiliary transistor is turned off and the main transistor is turned on again if yes.

A vehicle powertrain includes an IGBT and a gate driver. The IGBT is configured to energize an electric machine. The gate driver is configured to apply an off voltage less than a threshold voltage onto a gate of the IGBT while the IGBT is operating in a saturation mode, and in response to expiration of a delay from a transition from saturation to linear mode, apply a voltage pulse above the off voltage to reduce flyback from the electric machine. The gate driver may be configured to, in response to expiration of a delay from a transition from saturation to linear mode, apply a voltage pulse above the off voltage and below the threshold to reduce flyback from the electric machine.

A semiconductor device includes a first transistor, a second transistor coupled in parallel with the first transistor, and a first parasitic inductance between an emitter of the first transistor and an emitter of the second transistor. The semiconductor device includes a first circuit configured to provide a first gate driver signal to the first transistor based on a common driver signal and a second circuit configured to provide a second gate driver signal to the second transistor based on the common driver signal. The first circuit and the second circuit are configured to compensate for a voltage drop across the first parasitic inductance such that the first gate driver signal and the second gate driver signal are in phase with and at the same magnitude as the common driver signal.

A gate driving circuit of embodiments is provided with a first transistor which controls a gate-on voltage applied to a gate electrode of a switching device, a second transistor which controls a gate-off voltage applied to the gate electrode of the switching device, a driving logic circuit which controls turn-on/turn-off of the first and second transistors, a first power source which supplies the gate-on voltage to the gate electrode when the first transistor is turned on, a second power source which supplies the gate-off voltage to the gate electrode when the second transistor is turned on, a first gate resistance variable circuit in which a plurality of field effect transistors is connected in parallel, a second gate resistance variable circuit in which a plurality of field effect transistors is connected in parallel, and a gate resistance control circuit which controls gate voltages of a plurality of field effect transistors.