A process for fabricating a component includes an operation of transferring at least one layer of one or more piezoelectric or pyroelectric or ferroelectric materials forming part of a donor substrate to a final substrate, the process comprising a prior step of joining the layer to a temporary substrate via production of a fragile separating region between the donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material and the temporary substrate, the region comprising at least two layers of different materials in order to ensure two compounds apt to generate an interdiffusion of one or more constituent elements of at least one of the two compounds make contact, the fragile region allowing the temporary substrate to be separated.

A piezoelectric actuator for a miniature fluid transportation device is provided and includes a piezoelectric actuating plate and a piezoelectric element. The piezoelectric actuating plate includes a suspension plate, an outer frame, and brackets. The suspension plate has a first thickness. The outer frame is arranged around the suspension plate and has a third thickness. Each of the brackets is connected between the suspension plate and the outer frame and has a fourth thickness. The third thickness is larger than the first thickness, and the first thickness is larger than the fourth thickness. The suspension plate, the outer frame and the brackets are constructed to form different stepped structures to minimize the thickness of the brackets, enhance the elasticity of the brackets. Thus, displacement of the suspension plate in the vertical direction is enhanced and the transportation efficiency of the miniature fluid transportation device is intensified.

A multilayer piezoelectric element includes a ceramic body formed by a piezoelectric ceramic, and having first and second end face facing a longitudinal direction, first and second principal faces facing a thickness direction perpendicular to the longitudinal direction. A pair of external electrodes cover the first and second end faces, extend from the first and second end faces onto the first principal face via ridge parts connecting the end faces with the principal faces, and project in the thickness direction on the first principal face. Multiple internal electrodes are stacked inside the ceramic body and are connected alternately to the pair of external electrodes along the thickness direction. A surface electrode is provided on at least one of the first and second principal faces, and connected to the external electrode different from the one to which the internal electrode adjacent in the thickness direction is connected.

A multilayer piezoelectric element includes a ceramic body formed by a piezoelectric ceramic, and having first and second end face facing a longitudinal direction, first and second principal faces facing a thickness direction perpendicular to the longitudinal direction. A pair of external electrodes cover the first and second end faces, extend from the first and second end faces onto the first principal face via ridge parts connecting the end faces with the principal faces, and project in the thickness direction on the first principal face. Multiple internal electrodes are stacked inside the ceramic body and are connected alternately to the pair of external electrodes along the thickness direction. A surface electrode is provided on at least one of the first and second principal faces, and connected to the external electrode different from the one to which the internal electrode adjacent in the thickness direction is connected.

A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. Provided that at least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate is measured by spectral ellipsometry and that Δ is assigned to a difference of phases of p-polarized light and s-polarized light of a reflected light, a difference of the maximum and minimum values of the difference Δ of the phases in a wavelength range of 400 nm to 760 nm is 70° or lower.

A method of manufacturing a piezoelectric microactuator having a wrap-around electrode includes forming a piezoelectric element having a large central electrode on a top face, and having a wrap-around electrode that includes the bottom face, two opposing ends of the device, and two opposing end portions of the top face. The device is then cut through the middle, separating the device into two separate piezoelectric microactuators each having a wrap-around electrode.

An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO.sub.3 to various conventional substrates in a process for making various novel optical and acoustic devices.

A manufacturing method for an electronic component that includes a providing a base member on a first main surface of a first board, sandwiching the base member and a joining member paste between the first main surface of the first board and a transfer main surface of a transfer board, forming a joining member joined with the base member while the joining member paste is sandwiched by the first board and the transfer board, and peeling off the transfer board from the joining member joined with the base member.