A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.

Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

According to one embodiment, an imprint lithography template comprises a substrate transparent to ultraviolet light. A first mesa region is on the substrate. A surface of the first mesa region includes a pattern region to be pressed into a photocurable resist film. The pattern region having four sides. A second mesa region is also on the substrate. The first mesa region protrudes from a surface of the second mesa region. A blocking film is adjacent to two sides of the four sides pattern region. The two sides to which the blocking film is adjacent are connected to each other at a corner of the pattern region. The blocking film blocks ultraviolet light.

A method of creating electronic devices such as semiconductor chips using a maskless lithographic exposure system such as a charged particle multi-beamlet lithography system (301A-301D). The maskless lithographic exposure system comprises a lithography subsystem (316) including a maskless pattern writer such as a charged particle multi-beamlet lithography machine (1) or ebeam machine. The method comprises introducing unique chip design data (430) or information related thereto into pattern data comprising common chip design data before streaming the pattern data to the maskless pattern writer.

A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R.sup.1 represents a C1 to C30 divalent group; each of R.sup.2 to R.sup.7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R.sup.5 is a hydroxyl group or a thiol group; each of m.sup.2, m.sup.3, and m.sup.6 is an integer of 0 to 9; each of m.sup.4 and m.sup.7 is an integer of 0 to 8; m.sup.5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p.sup.2 to p.sup.7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q.sup.1 represents a single bond or an m.sup.12-valent organic group; each of R.sup.12 and R.sup.15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R.sup.13 and R.sup.16 represents a hydrogen atom or a methyl group; each of R.sup.14 and R.sup.17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group; n.sup.12 is an integer of 1 to 3; n.sup.13 is an integer of 2 to 5; n.sup.14 is an integer of 0 to 3; n.sup.15 is an integer of 0 to 3, with these ns having a relationship of 3≤(n.sup.12+n.sup.13+n.sup.14+n.sup.15)≥6; n.sup.16 is an integer of 1 to 3; n.sup.17 is an integer of 1 to 4; n.sup.18 is an integer of 0 to 3; n.sup.19 is an integer of 0 to 3, with these ns having a relationship of 2≤(n.sup.16+n.sup.17+n.sup.18+n.sup.19)≤5; and m.sup.12 is an integer of 2 to 10).

A field effect transistor includes: a semiconductor region including a first inactive region, an active region, and a second inactive region arranged side by side in a first direction; a gate electrode, a source electrode, and a drain electrode on the active region; a gate pad on the first inactive region; a gate guard on and in contact with the semiconductor region, the gate guard being apart from the gate pad and located between an edge on the first inactive region side of the semiconductor region and the gate pad; a drain pad on the second inactive region; a drain guard on and in contact with the semiconductor region, the drain guard being apart from the drain pad and located between an edge on the second inactive region side of the semiconductor region and the drain pad; and a metal film electrically connected to the gate guard.

A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. ##STR00001##
In Formula (1), R.sup.1, R.sup.2, and R.sup.3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R.sup.1, R.sup.2, and R.sup.3 may be the same or different and may bond to each other to form a ring structure.

Photoresist layers of semiconductor components including electric fields. The photoresist layer may include a body including a first portion disposed directly over a conductive layer of the semiconductor component. The body may also include a second portion integrally formed with and positioned over the first portion. The second portion may include a surface formed opposite the first portion. Additionally, the second portion may include a plurality of charged-particles implanted therein, where the plurality of charged-particles generating an electric field may extend through the first portion and the second portion of the body.

Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.