A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.

A substrate processing apparatus comprises a holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto the substrate held by the holder; and a resistance value varying mechanism configured to vary an electrical resistance of the holder in contact with the substrate.

A substrate processing apparatus comprises a holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto the substrate held by the holder; and a resistance value varying mechanism configured to vary an electrical resistance of the holder in contact with the substrate.

A manufacturing method for memory includes: providing a substrate, and forming a first isolation layer and discrete bit lines on the substrate; removing part of the first isolation layer by a thickness to form discrete first trenches; forming word lines filling the first trenches, wherein the word lines each has a first side wall and a second side wall opposite to each other; forming discrete through holes each being between adjacent word lines; forming a first dielectric layer on surface of exposed first side wall, and forming a second dielectric layer on surface of exposed second side wall; and forming an active layer filling the through holes.

A manufacturing method for memory includes: providing a substrate, and forming a first isolation layer and discrete bit lines on the substrate; removing part of the first isolation layer by a thickness to form discrete first trenches; forming word lines filling the first trenches, wherein the word lines each has a first side wall and a second side wall opposite to each other; forming discrete through holes each being between adjacent word lines; forming a first dielectric layer on surface of exposed first side wall, and forming a second dielectric layer on surface of exposed second side wall; and forming an active layer filling the through holes.