An apparatus and method enabling a reduction in a resistance of a conductive path electrically connecting an upper substrate and a lower substrate. The apparatus includes a first semiconductor layer with element formation regions disposed adjacent to one another via element isolation regions, each of the element formation regions having a first active element, contact regions on an element isolation region side of a front layer portion of the element formation regions, conductive pads connected to the contact regions and extending across the element isolation region, a first insulating layer, a second semiconductor layer on the first insulating layer and having a second active element, a second insulating layer covering the second semiconductor layer, and conductive plugs extending from the second insulating layer to the conductive pad, the conductive plugs including a material identical to a material of the conductive pad and formed integrally with the conductive pad.

An apparatus and method enabling a reduction in a resistance of a conductive path electrically connecting an upper substrate and a lower substrate. The apparatus includes a first semiconductor layer with element formation regions disposed adjacent to one another via element isolation regions, each of the element formation regions having a first active element, contact regions on an element isolation region side of a front layer portion of the element formation regions, conductive pads connected to the contact regions and extending across the element isolation region, a first insulating layer, a second semiconductor layer on the first insulating layer and having a second active element, a second insulating layer covering the second semiconductor layer, and conductive plugs extending from the second insulating layer to the conductive pad, the conductive plugs including a material identical to a material of the conductive pad and formed integrally with the conductive pad.

According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a reaction tube in which the substrate support is accommodated; a heater provided around the reaction tube; and an accommodation structure provided at a side surface of the reaction tube and configured to accommodate one or both of: a gas supply nozzle provided so as to extend from an outside of the reaction tube toward an inside of the reaction tube in a horizontal direction with respect to a surface of the substrate supported by the substrate support; and a first temperature measuring structure provided so as to extend from the outside of the reaction tube toward the inside of the reaction tube in the horizontal direction with respect to the surface of the substrate supported by the substrate support.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

A method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container, includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is accommodated; a nozzle accommodation structure provided at a side surface of the reaction tube and extending in a direction parallel to a surface of the substrate; a gas supply nozzle inserted in the nozzle accommodation structure and extending from an outside of the reaction tube to an inside of the reaction tube; and a first gas supply structure through which a first gas is supplied to the gas supply nozzle.

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

A raw material supply apparatus includes: a container configured to store a solution obtained by dissolving a first solid raw material in a solvent or a dispersion system obtained by dispersing the first solid raw material in a dispersion medium; an injection part configured to spray the solution or the dispersion system to inject the solution or the dispersion system into the container; an exhaust port configured to exhaust an inside of the container; a heating part configured to heat a second solid raw material formed by removing the solvent or the dispersion medium from the solution or the dispersion system; and a deposition part provided between the injection part and the exhaust port in the container and configured to deposit the second solid raw material.