Disclosed is a substrate processing apparatus that includes: a polishing table; an atomizer configured to spray a fluid to a polishing surface; a polishing liquid supply nozzle configured to drop a slurry at a position that corresponds to a slurry dropping position set on the polishing table and is lower than the top surface of the atomizer; a nozzle moving mechanism configured to move the polishing liquid supply nozzle above the atomizer between the retreat position set outside the polishing table and the slurry dropping position; and a nozzle tip retreating mechanism configured to bring the tip end of the polishing liquid supply nozzle into a retreated position above the top surface of the atomizer when the polishing liquid supply nozzle moves between the slurry dropping position and the retreat position.

One or more embodiments described herein generally relate to drying environments within semiconductor processing systems. In these embodiments, substrates are cleaned and dried within a drying environment before returning to the factory interface. However, due to an opening between the factory interface and the drying environment, air flows from the factory interface into the drying environment, often reducing the effectiveness of the drying processes. In embodiments described herein, the air flow is blocked by a sliding door that raises up to the closed position when a substrate enters the drying portion of the dryer located within the drying environment. After the substrate exits the dryer and before the substrate enters the factory interface, the sliding door lowers to the opened position such that the substrate can enter the factory interface. As such, these processes allow for multiple substrates to dry quickly and consistently within the system, improving throughput.

So as to perform a vacuum surface treatment on a workpiece at a predetermined temperature, which is different from a temperature to which the surface is exposed during the vacuum surface treatment, the workpiece is conveyed in a conveyance direction along one or more than one station group including one or more than one tempering station and of a single treatment station.

Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

The present disclosure is a substrate processing apparatus including: a chamber configured to accommodate a substrate; a heat source configured to heat-treat the substrate; a heat ray sensor provided outside the chamber and configured to receive infrared rays radiated from the substrate; and an infrared ray transmission window provided in the chamber and configured to transmit an infrared ray having a wavelength greater than or equal to 8 μm to the heat ray sensor.

A substrate handling chamber body is formed from a castable aluminum alloy including a manganese (Mn) constituent and an iron (Fe) constituent. The castable aluminum alloy has a manganese (Mn) constituent-to-iron (Fe) constituent ratio that between about 1.125 and about 1.525 to limit microporosity and shrinkage porosity within the castable aluminum alloy forming the substrate handling chamber body. Semiconductor processing systems and methods of making substrate handling chamber bodies for semiconductor processing systems are also described.

A method includes flowing gas comprising an oxidation inhibiting gas into a chamber of a semiconductor processing system. The chamber includes one or more of a factory interface of the semiconductor processing system or an adjacent chamber that is mounted to the factory interface. The method further includes receiving, via one or more sensors coupled to the chamber, sensor data indicating at least one of a current oxygen level within the chamber or a current moisture level within the chamber. The method further includes determining, based on the sensor data, whether to perform an adjustment of a current amount of the oxidation inhibiting gas entering into the chamber. The method further includes, responsive to determining to perform the adjustment, causing the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber.

A substrate treatment method for treating a substrate, includes the steps of: (A) heating the substrate having a coating film formed on a surface thereof by supply of a coating solution; (B), after the (A) step, moving a discharge destination of a removing solution from a peripheral position on the surface of the substrate toward a center side of the substrate and turning it back at a first position to return it again to the peripheral position while rotating the substrate; (C), after the (B) step, moving the discharge destination of the removing solution from the peripheral position on the surface of the substrate toward center side of the substrate and turning it back at a second position closer to an outside than the first position to return it again to the peripheral position while rotating the substrate; and (D), after the (C) step, heating again the substrate.

A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.

Embodiments of the present disclosure generally relate to methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range. In one implementation, a method of processing substrates includes introducing one or more processing gases to a processing volume of a processing chamber, and depositing a film on a substrate supported on a substrate support disposed in the processing volume. The method includes supplying simultaneously a first radiofrequency (RF) power and a second RF power to one or more bias electrodes of the substrate support. The first RF power includes a first RF frequency and the second RF power includes a second RF frequency that is less than the first RF frequency. A modulus of the film is maintained within a predetermined modulus range.