A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

A substrate processing technique including: a module including a gas supplier having an upstream side gas guide and a supply structure, a reaction tube communicating with the gas supplier, and a gas exhauster; a supply pipe connected to the gas supplier, and an exhaust pipe connected to the gas exhauster; a carry chamber adjacent to a plurality of the modules; and a piping arrangement region in which the supply pipe or the exhaust pipe can be arranged, in which the reaction tube is disposed at a position overlapping the carry chamber, when the supply pipe is disposed in the piping arrangement region, the gas exhauster is disposed at a position oblique to the shaft and not overlapping the carry chamber, and when the exhaust pipe is disposed in the piping arrangement area, the gas supplier is disposed at a position oblique to the shaft and not overlapping the carry chamber.

A substrate transport method is employed in a substrate processing system including a plurality of processing chambers, a load lock chamber, a vacuum transport device provided in a vacuum transport chamber connecting the load lock chamber and the plurality of processing chambers and configured to simultaneously transport a plurality of substrates, and an atmospheric transport device provided in an atmospheric transport chamber and configured to transport a substrate from a carrier to the load lock chamber. The substrate transport method includes acquiring in advance a relative positional error for a case where the plurality of substrates are transported from the load lock chamber to the plurality of processing chambers and placed on a stage in the plurality of processing chambers, and placing the plurality of substrates on a stage in the load lock chamber, based on a transport path of the plurality of substrates and the relative positional error.

Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

A CVD reactor includes a gas-tight and evacuatable reactor housing and an inner housing arranged therein. The inner housing has means for the infeed of a process gas and means for holding a substrate for treatment in the inner housing by means of the process gases. The inner housing also has a loading opening which can be closed off by a sealing element of a closure element. In its closure position, the closure element bears with an encircling sealing zone against a counterpart sealing zone which encircles the loading opening on the outer side of the inner housing. The sealing element is fastened to a carrier as to be adjustable in terms of inclination and/or pivotally movable about at least one spatial axis (X, Y, Z) and/or so as to be elastically deflectable in the direction of one of the spatial axes (X, Y, Z).

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

Cryogenic testing systems for testing electronic components such as wafers under cryogenic conditions are provided. The novel designs enable fast throughput by use of a cryogenically maintained test surface to which wafers may be rapidly introduced, cooled, and manipulated to contact testing elements while maintaining high quality cryogenic conditions. Thermal shielding is achieved by floating shields and/or flexible bellows that provide effective thermal shielding of the test environment while enabling manipulation of wafers with a wide range of motion. Also provided are novel door assemblies, chuck configurations, and vacuum plate bases that enable effective maintenance of cryogenic conditions and high throughput.

A linearly moving mechanism includes an internal moving body provided within a case body and configured to be moved in a linear direction, the internal moving body being configured to move an external moving body connected to a connection member protruded from the case body through an opening formed at the case body; a seal belt extending in the linear direction and provided within the case body to close the opening, a first surface side of both end portions of the seal belt in a widthwise direction thereof facing an edge portion of the opening while being spaced apart therefrom; and a deformation suppressing member provided to face a second surface side of the both end portions to suppress deformation of the seal belt, the seal belt being connected to the internal moving body to be moved along with a movement of the internal moving body.

The present disclosure provides a technique that includes: loading a substrate into a process chamber in which the substrate is processed; and processing the substrate by supplying a first inert gas to a peripheral portion of the substrate and simultaneously supplying a mixed gas of a second inert gas different from the first inert gas and a process gas to a surface of the substrate.

A sub-fab area installation apparatus capable of reducing a power consumption used in manufacturing of semiconductors is disclosed. The sub-fab area installation apparatus includes: a vacuum pump configured to evacuate a processing gas from a processing chamber of the semiconductor manufacturing equipment; a cooling unit configured to cool a first circulation liquid used in the processing chamber; a heating unit configured to heat a second circulation liquid used in the processing chamber; an abatement device configured to detoxify the processing gas discharged from the vacuum pump; and a cooling-liquid line configured to pass a cooling liquid therethrough. The cooling liquid is supplied from a cooling source. The cooling-liquid line includes: a first downstream line, a second downstream line, and a third downstream line configured to supply the cooling liquid that has passed through the abatement device, the vacuum pump, and the cooling unit to the heating unit.