A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.

A display apparatus includes a substrate partitioned into a central area and a peripheral area disposed adjacent to the central area. The central area includes a display area; a first insulating layer corresponding to the peripheral area of the substrate; at least one slit corresponding to a region of the first insulating layer; and a cladding layer, which covers the at least one slit, on the first insulating layer.

A display panel (65) and a method for manufacturing a display panel (65) that includes a front side and a back side, the display panel (65) including a substrate having a plurality of electrical components provided on a front side of the substrate and integrated circuits connected to the plurality of electrical components, the integrated circuits being embedded in the substrate. A plurality of edge contacts (54, 62) is also provided along edges of the substrate, where the plurality of edge contacts (54, 62) is electrically connected with the integrated circuits. An electrically conductive layer (51, 61) covers at least a part of the front side of the substrate and surrounds the plurality of electrical components, where the electrically conductive layer (51, 61) does not physically contact the embedded integrated circuits and provides EMI shielding to different components of the display panel (65).

Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

An array substrate, a display panel and a manufacturing method thereof are provided. The array substrate includes a base substrate including a peripheral region; and a lead region located in the peripheral region, the lead region including a plurality of leads, wherein a main plane of the base substrate provided with the plurality of leads includes a first side edge, and the plurality of leads extend to the first side edge, a lateral surface of the base substrate at the first side edge is provided with a concave portion, and an electrode electrically connected with the plurality of leads is disposed in the concave portion.

A display apparatus includes a substrate partitioned into a central area and a peripheral area disposed adjacent to the central area. The central area includes a display area; a first insulating layer corresponding to the peripheral area of the substrate; at least one slit corresponding to a region of the first insulating layer; and a cladding layer, which covers the at least one slit, on the first insulating layer.

An array substrate, its manufacturing method, and a display apparatus are provided. The array substrate having a substrate, includes: a monocrystalline silicon substrate employed as the substrate including a central display area, a first peripheral area, and a second peripheral area; substrate circuits integrated with a scan drive circuit in the first peripheral area, a data drive circuit in the second peripheral area, and a plurality of pixel circuits in the central display area; a plurality of scan lines in the central display area and coupled to the scan drive circuit; and a plurality of data lines in the central display area and coupled to the data drive circuit. The scan drive circuit, the data drive circuit, and the plurality of pixel circuits include a plurality of transistors, each of which has an active region inside the monocrystalline silicon layer.

An array substrate, a display panel, and a display device are disclosed. The array substrate includes a substrate and an array functional layer. The array substrate is provided with a through hole area including a through hole, a buffer area provided around the through hole area, and a display area provided around the buffer area. The buffer area includes part of the substrate and an inorganic film layer provided by the array functional layer. At least a groove is formed in the inorganic film layer around the through hole area, and the groove has a closed ring shape or a non-closed ring shape.

A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.