A display apparatus includes a base substrate, a thin film transistor disposed on the base substrate and including an active pattern, a gate electrode, a source electrode, and a drain electrode, an inorganic insulating layer disposed between the active pattern and the gate electrode, a first organic insulating layer disposed on the thin film transistor, a second organic insulating layer disposed on the first organic insulating layer, and an insulating layer disposed between the first organic insulating layer and the second organic insulating layer and in direct contact with the first organic insulating layer and the second organic insulating layer.

A display device includes: a substrate; a touch electrode disposed on the substrate; a routing wiring disposed on the touch electrode; a light blocking layer disposed on the touch electrode; a semiconductor layer disposed on the light blocking layer; a source electrode and a drain electrode spaced apart from each other and disposed on the semiconductor layer; and a gate electrode disposed on the source electrode and the drain electrode.

A transistor display panel including: a driving voltage line and a first electrode disposed on a substrate; a semiconductor overlapping the first electrode; and an electrode layer overlapping the semiconductor, the electrode layer including a drain electrode, a gate electrode, and a source electrode. The first electrode and the semiconductor are connected through the source electrode.

A liquid crystal display device includes a first substrate spaced from a second substrate, a liquid crystal layer between the first and second substrates, a gate line, a data line, a first sub-pixel electrode, and a second sub-pixel electrode on the first substrate. The display device also includes a first switch and a second switch. The first switch is connected to the gate line, the data line, and the first sub-pixel electrode. The second switch is connected to the gate line, the data line, and the second sub-pixel electrode. The second switch includes a first gate electrode connected to the gate line and a second gate electrode not connected to the gate line.

[Summary] [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

An array substrate of an X-ray sensor and a method for manufacturing the same are provided, the method comprising a step of forming a thin-film transistor element and a photodiode sensor element, wherein the step of forming the thin-film transistor element comprises: forming a gate electrode on an base substrate by a mask process; depositing a gate insulating layer on the base substrate on which the gate electrode is formed; the step of forming the photodiode sensor element comprises: forming an ohmic contact layer on the base substrate through the same mask process while forming the gate electrode; forming a semiconductor layer and a transparent electrode through a mask process on the substrate on which the ohmic contact layer is formed; depositing the gate insulating layer on the base substrate on which the semiconductor layer and the transparent electrode are formed while depositing the gate insulating layer on the base substrate on which the gate electrode is formed. A gate pattern and an ohmic contact layer are formed through the same mask process, and a passivation layer substitutes a channel blocking layer to reduce the number of the mask processes and simplify the manufacturing process and improve throughput and yield of the product.

An array substrate, a manufacturing method thereof and a display device are provided. The array substrate comprises a base substrate, and a gate line and a common electrode provided in the same layer, a gate insulation layer, an active layer, a source electrode and a drain electrode provided in the same layer; and a pixel electrode provided in the same layer as the active layer, sequentially arranged on the base substrate.

A method for placing a resist film of a region having a small film thickness with good shape accuracy is provided. The method has processes of placing a photoresist film 15 on a substrate body 10, exposing the photoresist film 15 using a halftone mask 30 having light transmittances of three or more tones, and developing the photoresist film 15. The photoresist film 15 after the development has a first photoresist film 16 and a second photoresist film 17 that is thicker than the first photoresist film 16. On the substrate body 10 after the development, the second photoresist film 17 is placed at a location where the second photoresist film 17 can be placed without removing the photoresist film 15.

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.