A display substrate, a manufacturing method thereof and a display device. The display substrate includes a base substrate and a plurality of subpixels arranged in an array form on the base substrate. Each subpixel includes a voltage stabilizing electrode, and a subpixel driving circuitry including a driving transistor, and a first transistor, a first electrode of which is coupled to a second electrode of the driving transistor, and a second electrode of which is coupled to a gate electrode of the driving transistor. An active layer of the first transistor includes a first semiconductor portion and a second semiconductor portion spaced apart from each other, and a conductor portion coupled to thereto. An orthogonal projection of the conductor portion onto the base substrate overlaps an orthogonal projection of voltage stabilizing electrode of a previous subpixel in the first direction onto the base substrate. According to the present disclosure, it is able to improve the brightness uniformity of the subpixels of a display panel.

In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.

A manufacturing method of a display substrate, an array substrate and a display device are provided. The method includes forming a first wire, a first insulation layer, a first and second metal layer, and a photoresist layer; forming a photoresist retained pattern above the first wire; forming a second and first metal layer retained pattern under the photoresist retained pattern; forming a second insulation layer with a thickness less than or equal to a sum of thicknesses of the first and second metal layer; the second insulation layer forming a fracture region at a boundary between a part covering the first insulation layer and another part covering the second metal layer retained pattern; removing the first and second metal layer retained patterns by a wet etch process to expose the first insulation layer; and forming a contact hole exposing the first wire.

An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

Disclosed are an array substrate of a thin-film transistor liquid crystal display device and a method for manufacturing the same. The array substrate includes a plurality of data lines, a plurality of dummy data lines, a plurality of first gate lines, a plurality of second gate lines, and a plurality of groups of pixel units. Each group of pixel units includes an odd-numbered column of first thin film transistors and an even-numbered column of second thin film transistors. First ends and second ends of the dummy data lines are connected respectively to two common voltage electrode lines, which are arranged on the substrate in a transverse direction. The method includes steps of: forming a plurality of gate lines and two common voltage electrode lines; forming a source, a drain, and a plurality of data lines; and forming a plurality of pixel electrodes and a plurality of dummy data lines. A light shielding electrode line provided has good voltage driving uniformity.

The present disclosure provides a display backplane, a method for preparing the same, and a display device. The display backplane includes a substrate, an electronic device and an alignment mark arranged on the substrate, and a filling layer, the filling layer being filled in at least a part of a recessed area located on a surface of the substrate away from the electronic device, and a minimum distance between an orthogonal projection of the at least part of the recessed area on the substrate and an orthogonal projection of the alignment mark on the substrate being less than 200 m.

The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Provided is a method of manufacturing a display, a display, and a liquid crystal television that can improve productivity and make a grain size uniform. A method of manufacturing a display includes: (A) deriving, when a laser beam is applied to an aSi film 18 provided on a substrate 11 to thereby polycrystallize the aSi film 18 and form a pSi film 14, a relationship between energy density of the laser beam and a grain size of the pSi film 14; (B) selecting a predetermined range of the energy density in the derived relationship; and (C) irradiating a first area including the aSi film 18 with a laser beam at energy density in the selected range of the energy density to thereby polycrystallize the aSi film 18 and form the pSi film 14.