A display device includes a transistor including an active layer including first and second active areas, where the first active area includes a first drain area, a source area, and a first channel area between the source area and the first drain area, and the second active area includes the source area, a second drain area, and a second channel area between the source area and the second drain area, a gate insulating layer on the active layer, first and second charge layers at an interface between the first channel area and the gate insulating layer and at an interface between the second channel area and the gate insulating layer, where the first charge layer is adjacent to the source area, and the second charge layer is adjacent to the first and second drain areas and has a charge opposite to a charge of a first charge layer.

A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which exposes the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The photoresist is provided to fill the through hole so as to improve the quality of a display device.

The present disclosure provides a method for manufacturing a TFT substrate and a method for manufacturing a TFT display apparatus, including the steps of: providing a base substrate; forming a source/drain metal layer on the base substrate; depositing a photoresist layer on the source/drain metal layer and patterning the photoresist layer to form a desired pattern of the photoresist layer; using a BCl.sub.3 gas to remove metal oxides generated on surface of the source/drain metal layer with air; and using a mixing gas including a Cl.sub.2 gas and the BCl.sub.3 gas to etch the source/drain metal layer.

The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

The present disclosure provides an array substrate and a method of manufacturing the same and a display panel, which belongs to the field of display technologies. The method of manufacturing the array substrate comprises: providing a base substrate; forming a drive circuit layer on the base substrate, wherein the drive circuit layer includes a switching transistor; forming an insulating material layer on one side of the drive circuit layer distal to the base substrate, wherein the insulating material layer has a connection via-hole exposing at least a part region of a drain electrode of the switching transistor; and forming an electrode layer on one side of the insulating material layer distal to the base substrate, wherein a surface of the electrode layer distal to the base substrate has groove structures extending to the connection via-hole. The manufacturing method may avoid the occurrence of poor coating in forming an orientation layer.

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

A light emitting diode display panel and a manufacturing method thereof, and a display device. The light emitting diode display panel includes a substrate, a plurality of light emitting diodes arranged in an array on the substrate; a plurality of polarization layers located on a light exit side of the plurality of light emitting diodes respectively, and the plurality of polarization layers are in a one-to-one correspondence to the plurality of light emitting diodes; the plurality of polarization layers include a plurality of first polarization layers and a plurality of second polarization layers having different polarization directions.

A display apparatus includes a first clock line providing a first clock signal and a second clock line providing a second clock signal. The first clock line includes a first main clock line and a first dummy clock line extending from the first main clock line, the second clock line includes a second main clock line and a second dummy clock line extending from the second main clock line, and the first dummy clock line and the second dummy clock line have different areas from each other.

The present disclosure provides a method for manufacturing an active switch array substrate, and the active switch array substrate, the method includes: providing a substrate; coating a first metal layer on the substrate; forming a gate electrode by treating the first metal layer; depositing an amorphous silicon layer on the substrate and the gate electrode; coating a second metal layer on the amorphous silicon layer; forming a patterned second metal layer; coating a passivation layer on the patterned second metal layer; forming a through hole in the passivation layer; coating a light permeability conductive layer on the passivation layer; and carrying out a fourth photolithography process to the light permeability conductive layer, the passivation layer, and the patterned second metal layer, to form a channel, a source electrode, and a drain electrode on the light permeability conductive layer, the passivation layer, and the patterned second metal layer.