Disclosed is a method of determining an X-ray image for a liquid crystal X-ray detector. The method includes a first step of measuring a reference transmittance of a pixel while varying a bias voltage in a state in which an X-ray sensing liquid crystal panel is not irradiated with an X-ray, a second step of separating electrons and holes in the X-ray sensing liquid crystal panel by applying a separation voltage and irradiating the X-ray sensing liquid crystal panel with an X-ray, a third step of measuring a detection transmittance of a pixel by applying a measurement voltage to the X-ray sensing liquid crystal panel, a fourth step of deriving a bias voltage of a reference transmittance of the pixel corresponding to the detection transmittance, and a fifth step of determining an X-ray image of the pixel by subtracting the measurement voltage from the bias voltage derived in the fourth step.

A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 μm or at least 20 μm with respect to each highly doped semiconductor contact region.

A radiation detector includes a substrate having a plurality of charge collection electrodes, a radiation absorption layer disposed on one side with respect to the substrate and formed of a perovskite material, a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and each of the plurality of charge collection electrodes, and a protective member disposed on the one side with respect to the substrate and being in contact with at least portions opposite to each other in a side surface of the radiation absorption layer.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

A solid state active pixel image sensor for back illumination by an electron beam is described. The image sensor comprises a thermal conduction layer for heat removal. The image sensor may also comprise a thinned silicon substrate on which an epitaxial layer is formed. The substrate may also be completely removed before or after application of the thermal conduction layer. The thermal conduction layer may comprise a metal, a metal compound, silicon, diamond or graphite.

An apparatus, system and method suitable for detecting X-ray are disclosed. In one example, the apparatus comprises: an X-ray absorption layer and a mask; wherein the mask comprises a first window and a second window, and a portion between the first window and the second window; wherein the first and second windows are not opaque to an incident X-ray; wherein the portion is opaque to the incident X-ray; and wherein the first and second windows are arranged such that charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the first window and charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the second window do not spatially overlap.

Monolithic CMOS integrated pixel detector (10, 20, 30, 260, 470, 570), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber wafer in an electrically conducting covalent wafer bond. The pixel detectors, systems and methods are used in various medical and non-medical types of applications.

Disclosed is a method of determining an X-ray image for a liquid crystal X-ray detector. The method includes a first step of measuring a reference transmittance of a pixel while varying a bias voltage in a state in which an X-ray sensing liquid crystal panel is not irradiated with an X-ray, a second step of separating electrons and holes in the X-ray sensing liquid crystal panel by applying a separation voltage and irradiating the X-ray sensing liquid crystal panel with an X-ray, a third step of measuring a detection transmittance of a pixel by applying a measurement voltage to the X-ray sensing liquid crystal panel, a fourth step of deriving a bias voltage of a reference transmittance of the pixel corresponding to the detection transmittance, and a fifth step of determining an X-ray image of the pixel by subtracting the measurement voltage from the bias voltage derived in the fourth step.

Disclosed herein is a system comprising: a first X-ray detector in a first layer; a second X-ray detector in a second layer; wherein the first X-ray detector comprises a first X-ray absorption layer and a first electronics layer; wherein the second X-ray detector comprises a second X-ray absorption layer and a second electronics layer; wherein the first X-ray detector is mounted to a first surface of a first printed circuit board; wherein the second X-ray detector is mounted to a first surface of a second printed circuit board, or to a second surface of the first printed circuit board opposite to the first surface of the first printed circuit board; wherein gaps in the second X-ray absorption layer are shadowed by the first X-ray absorption layer.

Disclosed herein is a radiation detector configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate positive charge carriers and negative charge carriers in the semiconductor single crystal. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The radiation detector comprises a first electrical contact in electrical contact with the semiconductor single crystal and a second electrical contact surrounding the first electrical contact or the semiconductor single crystal. The first electrical contact is configured to collect the negative charge carriers. The second electrical contact is configured to cause the positive charge carriers to drift out of the semiconductor single crystal.