A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

A method of capturing and analyzing information for a particle detection system comprises generating a reaction to a plurality of particles using a converter material, wherein the converter material is operable to interact with the plurality of particles. The method further comprises converting a response to the reaction to an electrical signal using a plurality of sensors, wherein the converter material is operable to be coated onto the plurality of sensors, and wherein each of the plurality of sensors comprises an array of discrete pixel sensors each with a respective (x,y) coordinate within the array. Further, the method comprises processing the electrical signal to generate data regarding each pixel on the array of discrete pixels and serializing the data collected from the plurality of sensors and transmitting the data over thin cables to a processing unit that is located at a separate and remote location from the plurality of sensors.

According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current. Other embodiments relate to a detector comprising an array of assemblies, and an imaging system comprising: an x-ray source and the detector.

The present technology relates to an imaging device of global shutter type, and relates to an imaging device and electronic equipment capable of inhibiting interference between a photoelectric conversion unit and an element that holds charge that has been transferred from the photoelectric conversion unit. An imaging device includes, in a pixel: a photoelectric conversion unit; a charge transfer unit; an electrode that is used to transfer charge from the photoelectric conversion unit to the charge transfer unit; a charge-voltage conversion unit; and a charge drain unit. Here, the charge transfer unit is allowed to transfer charge in a first transfer direction to the charge-voltage conversion unit and a second transfer direction to the charge drain unit. The present technology can be applied to, for example, a CMOS image sensor of global shutter type.

Disclosed is a liquid crystal X-ray detector in which only one substrate is used to make a liquid crystal unit by forming one of two alignment films for holding a liquid crystal layer therebetween on a selenium layer. Further disclosed is a method of manufacturing the same. The liquid crystal X-ray detector includes a photoconductor unit and a liquid crystal unit provided on the photoconductor unit. The photoconductor unit includes a first substrate, a selenium layer formed on the first substrate, and a first alignment film formed on the selenium layer. The first alignment film is formed of parylene deposited at a temperature lower than 45 C. in a vacuum atmosphere. The liquid crystal unit includes a second substrate, a second alignment film formed on the second substrate and opposed to the first alignment film, and a liquid crystal layer provided between the first alignment film and the second alignment film.

A sensor for detecting particles is presented comprises a silicon wafer substrate and a charge detection layer mounted on the silicon wafer substrate, wherein the charge detection layer comprises a plurality of discrete pixel sensors. The sensor further comprises a converter material, wherein the converter material is operable to interact with a first type of particle to generate a reaction, wherein the reaction produces charged particles, wherein the charge detection layer is configured to detect the charged particles produced by the reaction. Further, the sensor comprises a substrate layer operable to filter a second type of particle, wherein the converter material is coated on an underside of the substrate layer such that the converter material faces the charge detection layer and an air gap is formed between the converter material and the charge detection layer.

An imaging panel includes a photoelectric conversion element disposed on a substrate. The photoelectric conversion element includes a cathode electrode, a first semiconductor layer having a first conductive type, the first semiconductor layer being in contact with the cathode electrode, a second semiconductor layer having a second conductive type different from the first conductive type, the second semiconductor layer being joined to the first semiconductor layer, and an anode electrode in contact with the second semiconductor layer. The second semiconductor layer has a greater extinction coefficient as closer to the anode electrode.

This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with a surface exhibiting a periodic pattern of a prescribed size wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

An imaging panel includes: a photoelectric converting element on a substrate; a first wiring layer that does not overlap the element in plan view and that is provided more adjacent to the substrate than an anode of the element; and a second wiring layer provided at an opposite side to the substrate with respect to the element. A first insulating layer that overlaps the element and the first wiring layer in plan view is provided between the wiring layers. First and second openings that penetrate the first insulating layer are provided, the wiring layers are connected in the first opening, and the anode and the second wiring layer are connected in the second opening. An electrically independent adjustment metal layer is arranged at a position that overlaps the first opening in plan view and that is more adjacent to the substrate than the first wiring layer.