A step of forming an on-chip lens of a phase difference pixel is simplified. An imaging element includes a pixel array unit, an individual on-chip lens, a common on-chip lens, and an adjacent on-chip lens. In the pixel array unit, pixels that performs photoelectric conversion according to incident light components, a plurality of phase difference pixels that is included in the pixels, is arranged adjacent to each other, and detects a phase difference, and phase difference pixel adjacent pixels that are included in the pixels and are adjacent to the phase difference pixels are arranged two-dimensionally. The individual on-chip lens is arranged for each of the pixels and individually condenses the incident light components on corresponding one of the pixels. The common on-chip lens is commonly arranged in the plurality of phase difference pixels and commonly condenses the incident light component. The adjacent on-chip lens is arranged for each of the phase difference pixel adjacent pixels, individually condenses the incident light components on corresponding one of the phase difference pixel adjacent pixels, and is formed to have a size different from the individual on-chip lens to adjust a shape of the common on-chip lens.

A light detecting device is provided with: a filter array including filters arranged two-dimensionally, each of the filters having a light-incident surface and a light-emitting surface, the filters including multiple types of filters having mutually different transmission spectra; and an image sensor having a light-detecting surface facing the light-emitting surface, the image sensor being provided with light-detecting elements arranged two-dimensionally on the light-detecting surface, wherein the distance between the light-emitting surface and the light-detecting surface is different for each of the filters.

It is possible to curb noise, color mixing, and the like. An imaging apparatus includes: a semiconductor; a photoelectric conversion unit that is provided on the semiconductor substrate and generates electrical charge in accordance with the amount of received light through photoelectric conversion; an electrical charge holding unit that is disposed on a side closer to a first surface of the semiconductor substrate than the photoelectric conversion unit and holds the electrical charge transferred from the photoelectric conversion unit; an electrical charge transfer unit that transfers the electrical charge from the photoelectric conversion unit to the electrical charge holding unit; a vertical electrode that transmits the electrical charge generated by the photoelectric conversion unit to the electrical charge transfer unit and is disposed in a depth direction of the semiconductor substrate, and a first light control unit that is disposed on a side closer to a second surface that is a side opposite to the first surface of the semiconductor substrate than the vertical electrode, is disposed at a position overlapping the vertical electrode in a plan view of the semiconductor substrate from a normal line direction of the first surface, and has a T-shaped section in the depth direction of the substrate. The first light control member includes a first light control portion and a second light control portion extending in mutually intersecting directions in an integrated structure.

An imaging element package according to the present disclosure includes a circuit board, an imaging element substrate, and a light-transmissive substrate. The imaging element substrate is stacked on the circuit board. The light-transmissive substrate is stacked on the imaging element substrate via a void by an adhesive member provided on the peripheral edge of the light receiving surface of the imaging element substrate, and has higher heat resistance than the imaging element substrate. The imaging element package further includes a frame-shaped frame body stacked on the circuit board. The imaging element substrate and the light-transmissive substrate are housed in a region surrounded by the frame body.

Disclosed is an image sensor including a sensor substrate including a plurality of light sensing cells; a transparent spacer layer provided over the sensor substrate; and a color separation lens array provided over the spacer layer and including a plurality of nano-posts configured to change a phase of incident light according to an incident location, wherein the plurality of nano-posts are arranged in a plurality of layers, wherein, from among the plurality of nano-posts, nano-posts having widths less than wc may be arranged only in any one layer of the plurality of layers. Also, wc may be greater than or equal to 80 nm and less than or equal to 200 nm. Therefore, the minimum width of the nano-posts provided in the color separation lens array may be increased, which is advantageous for a manufacturing process.

An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.

A semiconductor device capable of improving the quality of a pixel region, an electronic apparatus including the semiconductor device, and a method for manufacturing the semiconductor device are to be provided. The present technology provides a semiconductor device that includes: a first substrate in which a pixel region including a pixel having a photoelectric conversion unit is formed; and a second substrate in which a logic circuit that processes a signal output from the pixel region is formed, the first substrate and the second substrate being stacked. In the semiconductor device, at least one of marks including a mark to be used in an exposure process during the manufacture of the semiconductor device and/or a mark to be used in an inspection process for the semiconductor device is formed in a first region that is a region between a first scribe region that is a peripheral portion of the first substrate and the pixel region and/or in a second region that is a region between a second scribe region that is a peripheral portion of the second substrate and a region corresponding to the pixel region in the second substrate.

[Object] A solid-state imaging apparatus that can suppress degradation of image quality caused by a groove between lenses is provided, and a method for manufacturing the solid-state imaging apparatus is also provided.

[Solving Means]

A solid-state imaging apparatus according to the present disclosure includes multiple photoelectric conversion sections, and multiple lenses provided above the multiple photoelectric conversion sections. The multiple lenses each include a groove provided between the lenses, and the groove includes a bottom surface shaped to protrude downward.

The present disclosure generally relates to a surface grating in a photodetector device. In an example, a semiconductor device structure includes a photodetector device. The photodetector device includes one or more photodiodes disposed in or over a semiconductor substrate, and includes a surface grating disposed at a respective surface of each photodiode of the one or more photodiodes. The surface grating has one or more periodicities. Each periodicity of the one or more periodicities has a period that is along a direction parallel to a first lateral direction across the semiconductor substrate and that is equal to or less than half of a dimension of at least one photodiode of the one or more photodiodes along a direction parallel to the first lateral direction. The one or more periodicities includes multiple different pitches.

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.