Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.

Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, embedded in a first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a first magnetic conductive material; and a second microelectronic component, embedded in a second dielectric layer on the first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a second magnetic conductive material, wherein the second microelectronic component is coupled to the surface of the first microelectronic component by a hybrid bonding region, and wherein the second magnetic conductive material is coupled to the first magnetic conductive material.

A transceiver includes first electrical channels and second electrical channels. The first electrical channels are configured to transfer electromagnetic signals to first air waveguides. Each of the first electrical channels extend from a transmitter along an exterior surface of a chip package that supports the transmitter and terminate at first transitions on the exterior surface. Each of the first plurality of air waveguides are attached to the exterior surface and overlay one of the first transitions. The transceiver also includes second electrical channels configured to transfer second electromagnetic signals from second air waveguides. Each of the second electrical channels extend from a receiver along the exterior surface of the chip package that supports the receiver and terminate at second transitions on the exterior surface. Each of the second air waveguides are attached to the exterior surface and overlay one of the second transitions.

A semiconductor device includes: a multilayer wiring substrate including a plurality of wiring layers; a first semiconductor chip disposed on the wiring substrate; and a bonding layer bonding the first semiconductor chip to the wiring substrate. A trace formed on the wiring substrate includes a first trace width portion and a second trace width portion, a width of the first trace width portion being greater than the second trace width portion.

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

A complementary metal-oxide-semiconductor (CMOS) device includes a metal oxide layer comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of an electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer opposite the first side, a first electrically conducting layer disposed on the first side of the metal oxide layer, and a second electrically conducting layer disposed on the second side of the metal oxide layer. The nanowires form a via electrically connecting first electrically conducting layer and the second electrically conducting layer.

A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.

The present disclosure relates to a transition system, which includes a monolithic microwave integrated circuit (MMIC) package and a printed-circuit-board (PCB) with a number of PCB vias. The MMIC package has a laminate-based body, which includes a substrate integrated waveguide (SIW) structure with a number of SIW vias, and a MMIC die over the laminate-based body. Herein, the SIW structure faces the PCB and is separate from the PCB with a gap in between. The SIW structure is configured to radiate radio frequency (RF) signals received from the MMIC die to the PCB. An arrangement of the PCB vias is scaling-mirrored to an arrangement of the SIW vias, such that each PCB via and a corresponding SIW via have a same relative position. The arrangement of PCB vias is about aligned with the arrangement of the SIW vias.

A multi-mode transmission line includes a first and second conductive layers, first and second waveguide walls, a strip line, and a blind conductor. The second conductive layer that is formed over the first conductive layer. The first waveguide wall is elongated in a first direction and is in contact with the first conductive layer and the second conductive layer in a vertical direction. The second waveguide wall is elongated in the first direction parallel to the first waveguide wall and is in contact with the first conductive layer and the second conductive layer in the vertical direction. The strip line is formed between the first and second conductive layers and between the first and second waveguide walls. The blind conductor is connected to one of the first conductive layer, the second conductive layer, the first waveguide wall, or the second waveguide wall.

The invention relates to a foil-based package with at least one foil substrate having an electrically conductive layer arranged thereon which is patterned to provide a first electrically conducting portion and a second electrically conducting portion, which is coplanar to the first electrically conducting portion, and a third electrically conducting portion, which is coplanar to the first electrically conducting portion, the first electrically conducting portion being arranged between the second and third electrically conducting portions. In accordance with the invention, the first electrically conducting portion is implemented to be a signal-guiding waveguide for high-frequency signals and the second electrically conducting portion, which is coplanar to the first electrically conducting portion, and the third electrically conducting portion, which is coplanar to the first electrically conducting portion, form an equipotential surface.