To manufacture a redistribution layer for an integrated circuit, a first insulating layer is formed on a conductive interconnection layer of a wafer. A conductive body is then formed in electrical contact with the interconnection layer. The conductive body is then covered with an insulating region having an aperture that exposes a surface of the conductive body. The surface of the conductive body and the insulating region are then covered with an insulating protection layer having a thickness less than 100 nm. This insulating protection layer is configured to provide a protection against oxidation and/or corrosion of the conductive body.

A semiconductor device includes an electronic component and a wiring structural body located below the electronic component. The wiring structural body includes an insulation layer and a wiring layer that is connected to an electrode terminal of the electronic component. The semiconductor device also includes a wiring shield body arranged on a side surface of the wiring structural body, an encapsulation resin covering an upper surface of the wiring structural body and a side surface of the electronic component, and a component shield body covering a surface of the encapsulation resin and continuously covering an upper surface side of the electronic component. The wiring shield body is connected to the component shield body. The wiring shield body includes an exposed side surface that is coplanar with a side surface of the component shield body.

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

Provided is a resin capable of producing a photosensitive resin composition having high sensitivity and heat resistance. Disclosed is a resin having a structure represented by general formula (1) or (2) as a main component, wherein R.sup.2 has an organic group represented by general formula (3) and an organic group represented by general formula (4).

The invention relates to polysulfonamide compositions for use as redistribution layers as used in the manufacture of semiconductors and semiconductor packages. More specifically it relates to photoimageable polysulfonamide composition for redistribution applications. The invention also relates to the use of the compositions in semiconductor manufacture.

A method includes performing a first light-exposure and a second a second light-exposure on a photo resist. The first light-exposure is performed using a first lithograph mask, which covers a first portion of the photo resist. The first portion of the photo resist has a first strip portion exposed in the first light-exposure. The second light-exposure is performed using a second lithograph mask, which covers a second portion of the photo resist. The second portion of the photo resist has a second strip portion exposed in the second light-exposure. The first strip portion and the second strip portion have an overlapping portion that is double exposed. The method further includes developing the photo resist to remove the first strip portion and the second strip portion, etching a dielectric layer underlying the photo resist to form a trench, and filling the trench with a conductive feature.

A method for forming a chip structure is provided. The method includes providing a semiconductor substrate, a first conductive line, and a first dielectric layer. The method includes forming a first conductive layer over the first dielectric layer. The method includes forming a second conductive layer over the first conductive layer. The method includes forming a second dielectric layer over the second conductive layer and the first conductive layer. The method includes forming a first through hole passing through the second dielectric layer, the first conductive layer, and the first dielectric layer. The method includes forming a first conductive structure in and over the first through hole.

Techniques that can assist with fabricating a semiconductor package that includes a zero misalignment-via (ZMV) and/or a trace formed using a polarization process are described. The disclosed techniques can result in creation of ZMVs and/or traces between the ZMVs using a process comprising application of polarized light to one or more resist layers (e.g., a photoresist layer, etc.). One embodiment of a technique includes modulating an intensity of light applied to one or more resist layers by interaction of a light source with a photomask and at least one polarizer such that one or more patterns are created on the one or more resist layers. One embodiment of another technique includes creating patterns on one or more resist layers with different types of polarized light formed from a photomask and at least one polarizer. The disclosed techniques can assist with reducing manufacturing costs, reducing development time, and increasing I/O density.

The method of manufacturing a connection structure of a semiconductor chip includes: preparing a semiconductor chip having a first surface having a connection pad disposed thereon and a second surface opposing the first surface and including a passivation layer disposed on the first surface and covering the connection pad; forming an insulating layer on the first surface of the semiconductor chip, the insulating layer covering at least a portion of the passivation layer; forming a via hole penetrating through the insulating layer to expose at least a portion of the passivation layer; exposing at least a portion of the connection pad by removing the passivation layer exposed by the via hole; forming a redistribution via by filling the via hole with a conductive material; and forming a redistribution layer on the redistribution via and the insulating layer.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first pad positioned above the substrate, and a first redistribution structure including a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer. The first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm.sup.2/Watt and about 0.25° C. cm.sup.2/Watt.