Semiconductor device assemblies with solderless interconnects, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly includes a first conductive pillar extending from a semiconductor die and a second conductive pillar extending from a substrate. The first conductive pillar may be connected to the second conductive pillar via an intermediary conductive structure formed between the first and second conductive pillars using an electroless plating solution injected therebetween. The first and second conductive pillars and the intermediary conductive structure may include copper as a common primary component, exclusive of an intermetallic compound (IMC) of a soldering process. A first sidewall surface of the first conductive pillar may be misaligned with respect to a corresponding second sidewall surface of the second conductive pillar. Such interconnects formed without IMC may improve electrical and metallurgical characteristics of the interconnects for the semiconductor device assemblies.

An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.

An electronic-part-reinforcing thermosetting resin composition has: a viscosity of 5 Pa.Math.s or less at 140° C.; a temperature of 150° C. to 170° C. as a temperature corresponding to a maximum peak of an exothermic curve representing a curing reaction; and a difference of 20° C. or less between the temperature corresponding to the maximum peak and a temperature corresponding to one half of the height of the maximum peak in a temperature rising range of the exothermic curve.

Semiconductor device assemblies with solderless interconnects, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly includes a first conductive pillar extending from a semiconductor die and a second conductive pillar extending from a substrate. The first conductive pillar may be connected to the second conductive pillar via an intermediary conductive structure formed between the first and second conductive pillars using an electroless plating solution injected therebetween. The first and second conductive pillars and the intermediary conductive structure may include copper as a common primary component, exclusive of an intermetallic compound (IMC) of a soldering process. A first sidewall surface of the first conductive pillar may be misaligned with respect to a corresponding second sidewall surface of the second conductive pillar. Such interconnects formed without IMC may improve electrical and metallurgical characteristics of the interconnects for the semiconductor device assemblies.

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a seed layer to cover a first passivation layer over a semiconductor substrate. The method also includes forming a metal layer to partially cover the seed layer by using the seed layer as an electrode layer in a first plating process and forming a metal pillar bump over the metal layer by using the seed layer as an electrode layer in a second plating process. In addition, the method includes forming a second passivation layer over the metal layer, wherein the second passivation layer includes a protrusion portion extending from a top surface of the second passivation layer and surrounding the sidewall of the metal pillar bump.

A wafer chip-scale package (WCSP) includes a substrate including a semiconductor surface layer including circuitry configured for at least one function having at least a top metal interconnect layer thereon that includes at least one bond pad coupled to a node in the circuitry. A redistribution layer (RDL) including a bump pad is coupled by a trace to metal filled plugs through a passivation layer to the bond pad. A solder ball is on the bump pad, and a dielectric ring is on the bump pad that has an inner area that is in physical contact with the solder ball.

A semiconductor device according to the present embodiment includes an insulation member, a columnar electrode, a member, and an electrode pad. The insulation member has a first face. The columnar electrode penetrates the insulation member in a direction approximately perpendicular to the first face. The columnar electrode has a columnar electrode member and a first metal layer of at least one layer which covers an outer circumference of the columnar electrode member and which extends until becoming exposed from the first face. The member is provided on the first face and is arranged so as to overlap with at least a part of the first metal layer that is exposed from the first face as viewed from a direction approximately perpendicular to the first face. The electrode pad is provided on the first face so as to cover the member and is electrically connected to the columnar electrode member.

A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

A copper pillar bump structure on a copper pillar on a metal pad of a semiconductor device and a method of fabricating thereof are disclosed. The copper pillar bump structure includes: a metal barrier layer formed on the copper pillar. The metal barrier layer has a U-shaped cross section, a central portion of the metal barrier layer covers the top surface of the copper pillar, an opening of the U-shaped cross section faces away from the copper pillar. The copper pillar bump structure further includes a solder layer on the copper pillar and filling the U-shaped cross section. The copper pillar bump structure provides a metal barrier layer having a U-shaped cross section and fills a solder layer in the U-shaped cross section, the metal barrier layer wraps sides of the solder layer, which can improve the non-wetting problem caused by insufficient tin, or the solder bridging problem caused by excessive solder, during a flip die soldering process.

A semiconductor fabrication apparatus has a transfer plate having a plurality of transfer pins to transfer a flux onto a plurality of lands on a semiconductor substrate, a holder movable with the transfer plate, to hold the transfer plate, a positioning mechanism to perform positioning of the holder so that the plurality of lands and the respective transfer pins contact each other; and a pitch adjuster to adjust a pitch of at least part of the plurality of transfer pins.