A semiconductor device includes: a semiconductor chip including a main surface electrode; a first mounting lead; a second mounting lead; a connection lead which overlaps with the main surface electrode, the first mounting lead and the second mounting lead when viewed in a thickness direction of the semiconductor chip and makes electrical conduction between the main surface electrode, the first mounting lead and the second mounting lead; and a resin portion which covers the semiconductor chip, the first mounting lead and the second mounting lead, wherein the resin portion has a resin bottom lying on the same plane as a bottom of the first mounting lead and a bottom of the second mounting lead.

A light emitting display including a circuit board, a plurality of light emitting devices arranged on the circuit board each including a first, LED stack, a second LED stack, and a third LED stack, a bump pad disposed between the circuit board and the light emitting device, the bump pad comprising Au material, and an encapsulating layer comprising an optical interference preventing material and covering the light emitting devices, in which the circuit board includes an interconnection line and a plurality of pads disposed on an upper surface thereof to provide electrical connection, the first, second, and third LED stacks are stacked in a vertical direction, one of the LED stacks configured to emit light having the longest wavelength among the first, second, and third LED stacks is in ohmic contact with the Au material, and the bump pad has an irregular upper surface.

An anisotropic conductive film whereby electrically conductive particles can be sufficiently captured at each connection terminal while suppressing the occurrence of shorts and conduction reliability can be improved even in cases where connecting finely pitched connection terminals. The anisotropic conductive film has a structure in which electrically conductive particle units in which electrically conductive particles are arranged in a row, or electrically conductive particle units in which electrically conductive particles are arranged in a row and independent electrically conductive particles are disposed in a lattice form in an electrically insulating adhesive layer. The shortest distance La between electrically conductive particles selected from adjacent electrically conductive particle units and the independent electrically conductive particles is not less than 0.5 times the particle diameter of the electrically conductive particles and.

PoP devices and methods of forming the same are disclosed. A PoP device includes a first package structure and a second package structure. The first package structure includes a first chip, and a plurality of active through integrated fan-out vias and a plurality of dummy through integrated fan-out vias aside the first chip. The second package structure includes a plurality active bumps bonded to the plurality of active through integrated fan-out vias, and a plurality of dummy bumps bonded to the plurality of dummy through integrated fan-out vias. Besides, a total number of the active through integrated fan-out vias and the dummy through integrated fan-out vias at a first side of the first chip is substantially the same as a total number of the active through integrated fan-out vias and the dummy through integrated fan-out vias at a second side of the first chip.

A die bonding apparatus includes: a driven body; and a table for driving the driven body. The table includes: a base; a linear motor having a first mover that moves the driven body, and a stator; a first linear motion guide that is provided between the base and the stator and capable of freely moving the stator; a second linear motion guide that is provided between the base and the first mover and capable of freely moving the first mover; a second mover provided in the form of being fixed to the base; and a control device for controlling the first mover and the second mover. The control device is configured to move the stator along the first linear motion guide using the second mover.

The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A method for connecting components involves providing an arrangement of at least two components each containing at least one metallic contact surface and a metallic sintering agent in the form of a metallic solid body having metal oxide surfaces arranged between the components and pressuring sintering the arrangement whereby metal oxide surfaces of the metallic sintering agent and the metallic contact surfaces of the components each form a joint contact surface. The pressure sintering is carried out in an atmosphere containing at least one oxidizable compound and/or the metal oxide surfaces are provided with at least one oxidizable organic compound before formation of the corresponding joint contact surface.

In a display device, in which an IC chip, which has an output and an input bump group, is mounted onto a display panel via an ACF, and a total area of end surfaces of output bumps that form the output bump group is larger than a total area of end surfaces of input bumps that form the input bump group, a concentration of conductive particles in a portion of the ACF corresponding to the output bump group is lower than a concentration of conductive particles in a portion of the ACF corresponding to the input bump group.

Provided is a resin sheet, wherein in a stress measurement in which a dynamic shear strain is applied in a direction parallel to a surface, the difference between a loss tangent as measured when a strain amplitude is 10% of the sheet thickness and a loss tangent as measured when the amplitude is 0.1% is equal to or greater than 1 at a temperature of 80° C. and a frequency of 0.5 Hz. The resin sheet of the present invention can provide a semiconductor device with excellent connection reliability, wherein air bubbles and cracks are less likely to occur in the resin sheet. In the resin composition of the present invention, aggregates are less likely to occur during storage. The resin sheet obtained by forming the resin composition into a sheet has good flatness. The hardened material thereof can provide a circuit board or a semiconductor device with high connection reliability.