H01L2224/27003

ANISOTROPIC CONDUCTIVE FILM
20170226387 · 2017-08-10 · ·

An anisotropic conductive film with a structure wherein an electrically insulting adhesive base layer and cover layer are stacked, and electrically conductive particles are disposed at lattice points with a planar lattice pattern in the vicinity of the interface of the layers. In the anisotropic conductive film, a proportion of lattice points at which no electrically conductive particles are disposed with respect to all lattice points with the planar lattice pattern assumed in any reference region is 25% or less, and some of the electrically conductive particles disposed at lattice points with planar lattice pattern are disposed to be shifted in longitudinal direction of anisotropic conductive film with respect to corresponding lattice points, and a shift amount defined as a distance between a plane projection center of the electrically conductive particles disposed to be shifted and the corresponding lattice point is less than 50% the electrically conductive particles' average diameter.

DICING DIE ATTACH FILM AND METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR PACKAGE AND METHOD OF PRODUCING THE SAME

A dicing die attach film containing a dicing film and a die attach film stacked on the dicing film, wherein the die attach film contains an organic solvent having a boiling point of 100° C. or more and less than 150° C. and a vapor pressure of 50 mmHg or less, and wherein an amount of the organic solvent in the die attach film satisfies the following (a):

(a) when 1.0 g of the die attach film is immersed in 10.0 mL of acetone at 4° C. for 24 hours, an amount of the organic solvent extracted into the acetone is 800 μg or less.

Manufacturing method for semiconductor device
11456215 · 2022-09-27 · ·

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

ANISOTROPIC ELECTRICALLY CONDUCTIVE FILM, METHOD FOR PRODUCING SAME, AND CONNECTION STRUCTURAL BODY
20170323701 · 2017-11-09 · ·

The present invention provides an anisotropic electrically conductive film with a structure, in which electrically conductive particles are disposed at lattice points of a planar lattice pattern in an electrically insulating adhesive base layer. A proportion of the lattice points, at which no electrically conductive particle is disposed, with respect to all the lattice points of the planar lattice pattern assumed as a reference region, is less than 20%. A proportion of the lattice points, at which plural electrically conductive particles are disposed in an aggregated state, with respect to all the lattice points of the planar lattice pattern, is not greater than 15%. A sum of omission of the electrically conductive particle and an aggregation of the electrically conductive particles is less than 25%.

Nanoscale Interconnect Array for Stacked Dies

A microelectronic assembly including an insulating layer having a plurality of nanoscale conductors disposed in a nanoscale pitch array therein and a pair of microelectronic elements is provided. The nanoscale conductors can form electrical interconnections between contacts of the microelectronic elements while the insulating layer can mechanically couple the microelectronic elements together.

Film for semiconductor device production, method for producing film for semiconductor device production, and method for semiconductor device production

The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.

Dicing film and dicing die-bonding film

The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*10.sup.5 to 4*10.sup.6 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.

Dicing film and dicing die-bonding film

The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*10.sup.5 to 4*10.sup.6 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20220238489 · 2022-07-28 · ·

A semiconductor device includes: a wiring board, a chip stack provided above the wiring board and including a first semiconductor chip; a second semiconductor chip provided between the wiring board and the first semiconductor chip; a first adhesive layer provided between the first semiconductor chip and the second semiconductor chip and on the second semiconductor chip; and a sealing insulation layer including a first part and a second part, the first part covering the chip stack, and the second part extending between the wiring board and the first semiconductor chip.

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
20220230989 · 2022-07-21 · ·

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.