Provided is an anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also provided is an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (?m), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

Anisotropic conductive film produced that a light-transmitting transfer die having openings with conductive particles disposed therein is prepared, and photopolymerizable insulating resin squeezed into openings to transfer conductive particles onto the surface of the photopolymerizable insulating resin layer, first connection layer is formed which has a structure in which conductive particles are arranged in a single layer in a plane direction of photopolymerizable insulating resin layer and the thickness of photopolymerizable insulating resin layer in central regions between adjacent ones of the conductive particles is smaller than thickness of photopolymerizable insulating resin layer in regions in proximity to conductive particles; first connection layer is irradiated with ultraviolet rays through light-transmitting transfer die; release film is removed from first connection layer; second connection layer is formed on the surface of first connection layer opposite to light-transmitting transfer die; and third connection layer is formed on the surface of first connection layer.

There are provided a bonding material, which can prevent voids from being generated in a silver bonding layer by preventing the entrainment of bubbles during the formation of a coating film even if the coating film is thickened, and a bonding method using the same. The bonding material of a silver paste includes fine silver particles, a solvent and an addition agent, wherein the solvent contains a first solvent of a diol, such as octanediol, and a second solvent which is a polar solvent (preferably one or more selected from the group consisting of dibutyl diglycol, hexyl diglycol, decanol and dodecanol) having a lower surface tension than that of the first solvent and wherein the addition agent is a triol.

An anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also, an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (?m), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

An anisotropic conductive film 1A includes a conductive particle array layer 4 in which a plurality of conductive particles 2 are arrayed in a prescribed manner and held in an insulating resin layer The anisotropic conductive film 1A has a direction in which a thick distribution, around the individual conductive particle, of the insulating resin layer 3 holding the array of the conductive particles 2 is asymmetric with respect to the conductive particle 2. The direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles. When an electronic component is mounted using this anisotropic conductive film 1A, short circuits and conductive failure can be reduced.

An anisotropic conductive film 1A includes a conductive particle array layer 4 in which a plurality of conductive particles 2 are arrayed in a prescribed manner and held in an insulating resin layer 3. The anisotropic conductive film 1A has a direction in which a thickness distribution, around the individual conductive particle, of the insulating resin layer 3 holding the array of the conductive particles 2 is asymmetric with respect to the conductive particle 2. The direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles. When an electronic component is mounted using this anisotropic conductive film 1A, short circuits and conductive failure can be reduced.

An anisotropic conductive film includes an insulating adhesive layer and conductive particles disposed thereon. Arrangement axes of the conductive particles having a particle pitch extend in a widthwise direction of the film, and the axes are sequentially arranged with an axis pitch in a lengthwise direction of the film. The particle pitch, axis pitch of the axes, and an angle of the axes relative the widthwise direction of the film are determined according to external shapes of terminals so 3 to 40 conductive particles are present on each terminal when a terminal arrangement region of an electronic component is superimposed on the film so a lengthwise direction of each terminal is aligned with the widthwise direction of the film. By using the film, stable connection reliability is obtained and an excessive increase in the density of the conductive particles is suppressed even in the connection of fine pitches.

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

The present disclosure is directed to a lead frame including a die pad with cavities, and methods for attaching a semiconductor die to the lead frame. The cavities allow for additional adhesive to be formed on the die pad at the corners of the semiconductor die, and prevent the additional adhesive from overflowing on to active areas of the semiconductor die.

The present disclosure provides a method according to some embodiments. The method includes receiving an integrated circuit (IC) layout of a semiconductor structure that includes a redistribution layout (RDL) structure having a plurality of RDL metallic features; modifying the IC layout such that the modified RDL structure meets a criterion associated with a X-Y ratio gap; generating a tape-out according to the modified IC layout; and fabricating the semiconductor structure according to the modified IC layout defined in the tape-out.