Patent classifications
H01L2224/27505
Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation
A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.
CONDUCTIVE ADHESIVE LAYER FOR SEMICONDUCTOR DEVICES AND PACKAGES
In various embodiments this disclosure is directed to conductive adhesives layers that can be used, in one example embodiment, to connect one or more shielding structures (for example, metal cans and/or covers) to a semiconductor package to enclose one or more electronic components on the semiconductor package. In another embodiment, the conductive adhesive layers disclosed herein can be used in connection with optoelectronic devices (for example, optoelectronic devices including laser diodes and/or avalanche photodiodes, APDs). In one embodiment, the conductive adhesives can additionally be used for thermal dissipation and for electrical contact in connection with one or more electronic components on a semiconductor package. In one embodiment, various materials including, spray prints, conductive paste, inks (for example, sintering silver-based materials), epoxy material (for example, epoxy materials filled with silver and/or other metal particles) can be used to provide a conductive adhesive layer.
Method for manufacturing metal powder
A method for manufacturing metal powder comprising: providing a basic metal salt solution; contacting the basic metal salt solution with a reducing agent to precipitate metal powder therefrom; and recovering precipitated metal powder from the solvent.
METHOD FOR JOINING ELECTRONIC PART USING A JOINING SILVER SHEET
A method for joining an electronic part, comprising: inserting a joining silver sheet between an electronic part and a substrate, to which the electronic part is to be joined; and heating them to the temperature range of T.sub.A ( C.) or higher and T.sub.B ( C.) or lower, under application of a pressure to the electronic part and the substrate to make a contact surface pressure of the electronic part and the silver sheet of from 0.5 to 3 MPa. The joining silver sheet comprises silver particles having a particle diameter of from 1 to 250 nm integrated by sintering, and has a capability of further undergoing sintering on heating and retaining the silver sheet at a temperature range of T.sub.A ( C.) or higher and T.sub.B ( C.) or lower satisfying the following expression (1): 270T.sub.A<T.sub.B350.
Mixed alloy solder paste
A solder paste consists of an amount of a first solder alloy powder between 60 wt % to 92 wt %; an amount of a second solder alloy powder greater than 0 wt % and less than 12 wt %; and a flux; wherein the first solder alloy powder comprises a first solder alloy that has a solidus temperature above 260 C.; and wherein the second solder alloy powder comprises a second solder alloy that has a solidus temperature that is less than 250 C.
Low pressure sintering powder
A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 ?m.
CONDUCTIVE ADHESIVE LAYER FOR SEMICONDUCTOR DEVICES AND PACKAGES
In various embodiments this disclosure is directed to conductive adhesives layers that can be used, in one example embodiment, to connect one or more shielding structures (for example, metal cans and/or covers) to a semiconductor package to enclose one or more electronic components on the semiconductor package. In another embodiment, the conductive adhesive layers disclosed herein can be used in connection with optoelectronic devices (for example, optoelectronic devices including laser diodes and/or avalanche photodiodes, APDs). In one embodiment, the conductive adhesives can additionally be used for thermal dissipation and for electrical contact in connection with one or more electronic components on a semiconductor package. In one embodiment, various materials including, spray prints, conductive paste, inks (for example, sintering silver-based materials), epoxy material (for example, epoxy materials filled with silver and/or other metal particles) can be used to provide a conductive adhesive layer.
POWER MODULE ASSEMBLY WITH DUAL SUBSTRATES AND REDUCED INDUCTANCE
A power module assembly has a first substrate including a first layer, second layer and a third layer. The first layer is configured to carry a switch current flowing in a first direction. A second substrate is operatively connected to the first substrate and includes a fourth layer, fifth layer and a sixth layer. A conductive joining layer connects the third layer of the first substrate and the fourth layer of the second substrate. The conductive joining layer may be a first sintered layer. The third layer of the first substrate, the first sintered layer and the fourth layer of the second substrate are configured to function together as a unitary conducting layer carrying the switch current in a second direction substantially opposite to the first direction. The net inductance is reduced by a cancellation effect of the switch current going in opposite directions.
Power module substrate with Ag underlayer and power module
A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm.sup.1 to 4,000 cm.sup.1 indicated by I.sub.A, and a maximum value of intensity in a wavenumber range of 450 cm.sup.1 to 550 cm.sup.1 is indicated by I.sub.B, I.sub.A/I.sub.B is 1.1 or greater.
Laser sintered interconnections between die
Embodiments of a microelectronic packaged device and methods of making are provided, where the microelectronic packaged device includes a system package comprising a first die and a second die, wherein the first die and the second die are laterally positioned to one another, and the first die and the second die are laterally separated from one another by mold compound; and a conductive trace formed between a first conductive surface on an exposed surface of the first die and a second conductive surface on an exposed surface of the second die, wherein the conductive trace is laser sintered directly on the first conductive surface, on a portion of the exposed surface of the first die, on a portion of a top surface of the mold compound, on a portion of the exposed surface of the second die, and on the second conductive surface.