A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

A die attachment structure can include: a base; a die located above a first surface of the base; a first adhesive layer located on a back surface of the die, wherein the die is pasted on the first surface of the base at least by the first adhesive layer; and a second adhesive layer at least partially covering the sidewalls of the die.

Provided is a semiconductor package including: at least one semiconductor device on a first substrate; a non-conductive film (NCF) on the at least one semiconductor device and comprising an irreversible thermochromic pigment; and a molding member on the at least one semiconductor device in a lateral direction, wherein a content of the irreversible thermochromic pigment in the NCF is about 0.1 wt % to about 5 wt % with respect to a weight of the NCF.

A composition includes: a compound (A), having an Si—O bond and a cationic functional group that includes at least one selected from the group consisting of a primary nitrogen atom and a secondary nitrogen atom; a compound (B), having at least three —C(═O)OX groups, wherein X is a hydrogen atom or an alkyl group with a carbon number of from 1 to 6, and from one to six of the —C(═O)OX groups is a —C(═O)OH group; and a compound (C), having a cyclic structure and at least one primary nitrogen atom that is directly bonded to the cyclic structure, the composition having a percentage of the primary and the secondary nitrogen atoms in the compound (A), with respect to a total amount of the primary and the secondary nitrogen atoms in the compound (A) and the primary nitrogen atom in the compound (C), of from 3 mol % to 95 mol %.

A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

A semiconductor package includes a first semiconductor chip including a first chip body portion and a first chip rear bump disposed in a region recessed into the first chip body portion, and a second semiconductor chip stacked on the first semiconductor chip and including a second chip body portion and a second chip front bump protruding from the second chip body portion. The first chip rear bump includes a lower metal layer and a solder layer disposed on the lower metal layer. The second chip front bump is bonded to the solder layer. The second chip front bump is disposed to cover at least the solder layer on a bonding surface of the second chip front bump and the solder layer.

A semiconductor device includes a wiring board; a first semiconductor chip including a first surface, a second surface, and a connection bump on the first surface, the first semiconductor chip coupled to the wiring board through the connection bump; a resin layer covering the connection bump between the first semiconductor chip and the wiring board, an upper surface of the resin layer parallel to the second surface of the first semiconductor chip; and a second semiconductor chip including a third surface, a fourth surface, and an adhesive layer on the third surface, the second semiconductor chip adhering to the second surface of the first semiconductor chip and the upper surface of the resin layer through the adhesive layer. The upper surface of the resin layer projects outside a portion of at least an outer edge of the second semiconductor chip when viewed from the top.

An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.