The present disclosure relates to micro-LED chips, methods for manufacturing the same, and display devices. The micro-LED chip includes: a driving backplane including at least one first electrode, a groove being provided above the first electrode, and the first electrode being located at a bottom of the groove; the groove being filled with a conductive material, and the conductive material being obtained by curing a corresponding conductive ink; and a light emitting chip including at least one second electrode; and the first electrode is connected to the second electrode through the conductive material.

A manufacturing method of a device chip includes a die bonding resin providing step of supplying a die bonding resin in a liquid state to a back surface side of a wafer with device chips formed on a front surface thereof and solidifying the die bonding resin, a water-soluble resin providing step of covering the die bonding resin with a water-soluble resin, a laser processing step of applying a laser beam from the back surface side of the wafer to remove the die bonding resin and the water-soluble resin, an etching step of etching an exposed portion on the back surface side of the wafer to divide the wafer, and a water-soluble resin removing step of supplying water on the back surface side of the wafer to remove the water-soluble resin.

A bump-forming film is used for forming, on a semiconductor device such as a bumpless IC chip, bumps which are low in cost and can achieve stable conduction reliability. The bump-forming film is configured such that conductive fillers for bumps are arranged regularly in a planar view in an insulating adhesive resin layer. The regular arrangement has a periodic repeating unit in the longitudinal direction of the film. The straight line which connects one ends of the conductive fillers for bumps in the thickness direction of the film is substantially parallel to the surface of the film.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

A thermal interface material and systems and methods for forming a thermal interface material include depositing a layer of a composite material, including at least a first material and a second material, the first material including a carrier fluid and the second material including a filler particle suspended within the first material. A particle manipulator is positioned over the layer of the composite material, the particle manipulator including at least one emitter to apply a particle manipulating field to bias a movement of the filler particles. The second material is redistributed by applying the particle manipulating field to interact with the second material causing the second material to migrate from a surrounding region in the composite material into a high concentration region in the composite material to form a customized thermal interface such that the high concentration region is configured and positioned corresponding to a hotspot.

A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

An anisotropic conductive film having a multilayer structure having conductive particles arranged in a single layer has a first connection layer and a second connection layer formed on a surface of the first connection layer. The first connection layer is a photopolymerized resin layer, and the second connection layer is a thermally or photo-cationically, anionically, or radically polymerizable resin layer. On the surface of the first connection layer on a side of the second connection layer, the conductive particles for anisotropic conductive connection are arranged in a single layer, and the first connection layer contains an insulating filler.